TY - JOUR
T1 - 130-GHz fT SiGe HBT technology
AU - Oda, Katsuya
AU - Ohue, Eiji
AU - Tanabe, Masamichi
AU - Shimamoto, Hiromi
AU - Onai, Takahiro
AU - Washio, Katsuyoshi
PY - 1997/12/1
Y1 - 1997/12/1
N2 - A real emitter/base heterojunction was formed with the optimization of the vertical profile of the transistor, and good crystallinity of SiGe was achieved by using a UHV/CVD system with high-pressure H2 precleaning of the substrate. As a result, a record cutoff frequency up to 130 GHz and the current gain up to 29,000 were obtained with a graded and uniform Ge profiles, respectively.
AB - A real emitter/base heterojunction was formed with the optimization of the vertical profile of the transistor, and good crystallinity of SiGe was achieved by using a UHV/CVD system with high-pressure H2 precleaning of the substrate. As a result, a record cutoff frequency up to 130 GHz and the current gain up to 29,000 were obtained with a graded and uniform Ge profiles, respectively.
UR - http://www.scopus.com/inward/record.url?scp=84886448070&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=84886448070&partnerID=8YFLogxK
M3 - Conference article
AN - SCOPUS:84886448070
SN - 0163-1918
SP - 791
EP - 794
JO - Technical Digest - International Electron Devices Meeting
JF - Technical Digest - International Electron Devices Meeting
T2 - 1997 International Electron Devices Meeting
Y2 - 7 December 1997 through 10 December 1997
ER -