TY - GEN
T1 - 1.9GHz/5.8GHz-band on-chip matching Si-MMIC low noise amplifiers fabricated on high resistive Si substrate
AU - Ono, Masayoshi
AU - Suematsu, Noriharu
AU - Kubo, Shunji
AU - Iyama, Yoshitada
AU - Takagi, Tadashi
AU - Ishida, Osami
PY - 1999/1/1
Y1 - 1999/1/1
N2 - The use of high resistive Si substrate, instead of conventional low resistive Si substrate, enables to reduce the loss of spiral inductor for on-chip matching circuit by 61% at 1.9GHz and by 78% at 5.8GHz, and to improve gain and noise performance of BJT. These improvements are explained as the reduction of dielectric loss of substrate by referring equivalent circuit model extraction. The fabricated 1.9GHz-band on-chip matching LNA performs 13.4dB gain, 1.9dB NF with 2V, 2mA d.c. power and 5.8GHz-band LNA performs 6.9 dB gain, 3.3 dB NF with 3V, 3mA d.c. power.
AB - The use of high resistive Si substrate, instead of conventional low resistive Si substrate, enables to reduce the loss of spiral inductor for on-chip matching circuit by 61% at 1.9GHz and by 78% at 5.8GHz, and to improve gain and noise performance of BJT. These improvements are explained as the reduction of dielectric loss of substrate by referring equivalent circuit model extraction. The fabricated 1.9GHz-band on-chip matching LNA performs 13.4dB gain, 1.9dB NF with 2V, 2mA d.c. power and 5.8GHz-band LNA performs 6.9 dB gain, 3.3 dB NF with 3V, 3mA d.c. power.
UR - http://www.scopus.com/inward/record.url?scp=0032638312&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=0032638312&partnerID=8YFLogxK
M3 - Conference contribution
AN - SCOPUS:0032638312
SN - 0780356047
T3 - IEEE Radio Frequency Integrated Circuits Symposium, RFIC, Digest of Technical Papers
SP - 189
EP - 192
BT - IEEE Radio Frequency Integrated Circuits Symposium, RFIC, Digest of Technical Papers
PB - IEEE
T2 - Proceedings of the 1999 IEEE Radio Frequency Integrated Circuits (RFIC) Symposium
Y2 - 13 June 1999 through 15 June 1999
ER -