√2 step of conductance fluctuations due to the broken time-reversal symmetry in bulk-insulating BiSbTeSe2 devices

Shuai Zhang, Xing Chen Pan, Zhaoguo Li, Faji Xie, Yuyuan Qin, Lu Cao, Xuefeng Wang, Xinran Wang, Feng Miao, Fengqi Song, Baigeng Wang

研究成果: ジャーナルへの寄稿学術論文査読

3 被引用数 (Scopus)

抄録

We extract the conductance fluctuations and study their magnetic field dependence in the gate-dependent transport of topological electrons in bulk-insulating BiSbTeSe2 devices. With the increasing magnetic field, the conductance fluctuation magnitudes are found to reduce by a ratio of 2 and form a quantized step. The step is observed both in n-type and p-type transport. This is related to the breaking of the time reversal symmetry of three-dimensional topological insulators.

本文言語英語
論文番号243106
ジャーナルApplied Physics Letters
112
24
DOI
出版ステータス出版済み - 2018 6月 11

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