24.8dBm power handling 60GHz Transmit/Receive switch using series and shunt FETs in 90nm Si-CMOS process

Shoichi Tanifuji, Noriharu Suematsu, Suguru Kameda, Tadashi Takagi, Kazuo Tsubouchi

研究成果: Conference contribution

2 被引用数 (Scopus)

抄録

90 nm Si-CMOS high power handling Transmit/Receive (T/R) Switch is proposed for 60 GHz wireless applications. By adopting series and shunt FETs circuit configuration and by employing large FET gate width of 320 μm, high transmit power handling capability is achieved. Since the use of large FET gate width degrades the insertion loss and isolation in the receive mode, a microstrip line is connected between the source and drain to make resonance with C off of the FET at 60 GHz in off-state. Simulated result shows that the designed T/R switch has over 1 W transmit power handling capability at 60 GHz. Fabricated results show the linear transfer characteristics up to 24.8 dBm at 60 GHz and 36.5 dBm at 36 GHz in transmit mode. Both upper limits comes from the limitation of measurement setup and we expect that this T/R switch has over 1 W power handling at 60 GHz.

本文言語English
ホスト出版物のタイトルEuropean Microwave Week 2011
ホスト出版物のサブタイトル"Wave to the Future", EuMW 2011, Conference Proceedings - 6th European Microwave Integrated Circuit Conference, EuMIC 2011
ページ216-219
ページ数4
出版ステータスPublished - 2011 12月 1
イベント14th European Microwave Week 2011: "Wave to the Future", EuMW 2011 - 6th European Microwave Integrated Circuit Conference, EuMIC 2011 - Manchester, United Kingdom
継続期間: 2011 10月 102011 10月 11

出版物シリーズ

名前European Microwave Week 2011: "Wave to the Future", EuMW 2011, Conference Proceedings - 6th European Microwave Integrated Circuit Conference, EuMIC 2011

Other

Other14th European Microwave Week 2011: "Wave to the Future", EuMW 2011 - 6th European Microwave Integrated Circuit Conference, EuMIC 2011
国/地域United Kingdom
CityManchester
Period11/10/1011/10/11

ASJC Scopus subject areas

  • ハードウェアとアーキテクチャ
  • 電子工学および電気工学

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