@article{4f8c1617a69d4b4c92b03acd45b16bdb,
title = "2H-SiC films grown by laser chemical vapor deposition",
abstract = "We demonstrated the synthesis of 2H-SiC films on graphite and (0001) sapphire substrates by laser chemical vapor deposition. A tris(dimethylamino) silane was used as a novel precursor for the synthesis of SiC films in a CH4 atmosphere. The 2H-SiC films were obtained at a deposition temperature of 920K on the sapphire substrate. The films comprised a-axis-oriented columnar grains and their in-plane orientation relationship was [1000] 2H-SiC // [0001] sapphire and [0001] 2H-SiC // [1000] sapphire. The films were deposited at the rate of 182μmh-1.",
keywords = "2H-SiC, Chemical vapor deposition, Film, Silicon carbide",
author = "Akihiko Ito and Hitoshi Kanno and Takashi Goto",
note = "Funding Information: This research was supported in part by a Grant-in-Aid for Young Scientists (A) (No. 25709069) from the Japan Society for the Promotion of Science (JSPS) , and in part by Council for Science, Technology and Innovation (CSTI) , Cross-ministerial Strategic Innovation Promotion Program (SIP) , “Structural Materials for Innovation” (Funding agency: JST) . XPS measurement was supported by the cooperative program (No. 15G0410) of the CRDAM-IMR, Tohoku University, Japan. Publisher Copyright: {\textcopyright} 2015 Elsevier Ltd.",
year = "2015",
month = dec,
doi = "10.1016/j.jeurceramsoc.2015.08.028",
language = "English",
volume = "35",
pages = "4611--4615",
journal = "Journal of the European Ceramic Society",
issn = "0955-2219",
publisher = "Elsevier BV",
number = "16",
}