30-nm-gate InAlAs/InGaAs HEMTs lattice-matched to InP substrates

Tetsuya Suemitsu, Tetsuyoshi Ishii, Haruki Yokoyama, Yohtaro Umeda, Takatomo Enoki, Yasunobu Ishii, Toshiaki Tamamura

研究成果: Conference article査読

46 被引用数 (Scopus)


In this paper, we report the fabrication and the device characteristics of the InP-based lattice-matched HEMTs with a 30-mn gate, which is the smallest gate yet achieved for inP-based HEMTs. A fullerene-incorporated nanocomposite resist is used in electron beam (EB) lithography to achieve such a small gate. A cutoff frequency of the 30-nm-gate HEMTs is 350 GHz, which is comparable to the reported value for 50-nm-gate InP-based pseudomorphic HEMTs and one of the highest value achieved by any kind of three-terminal electronic device.

ジャーナルTechnical Digest - International Electron Devices Meeting
出版ステータスPublished - 1998 12月 1
イベントProceedings of the 1998 IEEE International Electron Devices Meeting - San Francisco, CA, USA
継続期間: 1998 12月 61998 12月 9

ASJC Scopus subject areas

  • 電子材料、光学材料、および磁性材料
  • 凝縮系物理学
  • 電子工学および電気工学
  • 材料化学


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