40 GHz 7.9 mW low-power frequency divider IC using self-aligned selective-epitaxial-growth SiGe HBTs

R. Hayami, Katsuyoshi Washio

研究成果: Article査読

抄録

A low-power current-mode-logic frequency divider integrated circuit (IC) that operated at 40 GHz with a power consumption of 7.9 mW per master-slave flip-flop was fabricated using 0.2 μm self-aligned selective-epitaxial-growth SiGe heterojunction bipolar transistors. This IC also operated at 35 GHz from a supply voltage of -2.2 V. To the authors' knowledge this IC consumes the least power of any for operation in the millimetre-waveband that have appeared to date.

本文言語English
ページ(範囲)707-709
ページ数3
ジャーナルElectronics Letters
38
14
DOI
出版ステータスPublished - 2002 7月 4
外部発表はい

ASJC Scopus subject areas

  • 電子工学および電気工学

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