TY - JOUR
T1 - 67-GHz static frequency divider using 0.2-μm self-aligned SiGe HBTs
AU - Washio, Katsuyoshi
AU - Hayami, Reiko
AU - Ohue, Eiji
AU - Oda, Katsuya
AU - Tanabe, Masamichi
AU - Shimamoto, Hiromi
AU - Kondo, Masao
PY - 2000/1/1
Y1 - 2000/1/1
N2 - A 67-GHz 1/4 static frequency divider using a 0.2-μm self-aligned selective-epitaxial-growth SiGe HBT was developed. This is among the highest operating frequencies for static dividers reported for any semiconductor technology, yet the power consumption of the divider is 1/5 that of comparable dividers.
AB - A 67-GHz 1/4 static frequency divider using a 0.2-μm self-aligned selective-epitaxial-growth SiGe HBT was developed. This is among the highest operating frequencies for static dividers reported for any semiconductor technology, yet the power consumption of the divider is 1/5 that of comparable dividers.
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M3 - Conference article
AN - SCOPUS:0033720572
SN - 1097-2633
SP - 31
EP - 34
JO - IEEE Radio Frequency Integrated Circuits Symposium, RFIC, Digest of Technical Papers
JF - IEEE Radio Frequency Integrated Circuits Symposium, RFIC, Digest of Technical Papers
T2 - 2000 IEEE Radio Frequency Integrated Circuits (RFIC) Symposium
Y2 - 11 May 2000 through 13 June 2000
ER -