A {112}Σ3 grain boundary generated from the decomposition of a Σ9 grain boundary in multicrystalline silicon during directional solidification

研究成果: Article査読

6 被引用数 (Scopus)

抄録

The generation of a {112}Σ3 grain boundary (GB) was observed in situ from the decomposition of a Σ9 GB during directional solidification of multicrystalline Si. A faceted groove formed at the junction of the solid/melt interface and the {112}Σ3 GB. This mechanism is different from that for the growth of {111}Σ3 GBs, for which no groove formed at the interface. If the growth rates for the adjacent facets of the groove are the same, the GB can grow in a straight manner along the {112} plane. The present results suggest that kinetics can give rise to high-energy GBs during solidification.

本文言語English
ページ(範囲)46-50
ページ数5
ジャーナルScripta Materialia
167
DOI
出版ステータスPublished - 2019 7月 1

ASJC Scopus subject areas

  • 材料科学(全般)
  • 凝縮系物理学
  • 材料力学
  • 機械工学
  • 金属および合金

フィンガープリント

「A {112}Σ3 grain boundary generated from the decomposition of a Σ9 grain boundary in multicrystalline silicon during directional solidification」の研究トピックを掘り下げます。これらがまとまってユニークなフィンガープリントを構成します。

引用スタイル