A 800(H) × 600(V) high sensitivity and high full well capacity CMOS image sensor with active pixel readout feedback operation

Woonghee Lee, Nana Akahane, Satoru Adachi, Koichi Mizobuchi, Shigetoshi Sugawa

研究成果: 書籍の章/レポート/Proceedings会議への寄与査読

3 被引用数 (Scopus)

抄録

A high sensitivity and high full well capacity CMOS image sensor using active pixel readout feedback operation with positions of pixel select switch, operation timings and initial bias conditions has been reported. 1/3-inch 5.6-μm pixel pitch 800(H) × 600(V) color CMOS image sensors with the switch X set on or under the pixel SF have been fabricated by a 0.18-μm 2-Poly 3-Metal CMOS technology. The comparison of the active pixel readout feedback operation between two CMOS image sensors, which only have the deference of the switch X's position, has performed. As to the result, the switch X set on the pixel SF is favor for the active pixel readout feedback operation to improve the readout gain and the S/N ratio. This CMOS image sensor achieves high readout gain, high conversion gain, low input-referred noise and high full well capacity by the active pixel readout feedback operation.

本文言語英語
ホスト出版物のタイトルProceedings of SPIE-IS and T Electronic Imaging - Sensors, Cameras, and Systems for Industrial/Scientific Applications IX
DOI
出版ステータス出版済み - 2008
イベントSensors, Cameras, and Systems for Industrial/Scientific Applications IX - San Jose, CA, 米国
継続期間: 2008 1月 292008 1月 31

出版物シリーズ

名前Proceedings of SPIE - The International Society for Optical Engineering
6816
ISSN(印刷版)0277-786X

会議

会議Sensors, Cameras, and Systems for Industrial/Scientific Applications IX
国/地域米国
CitySan Jose, CA
Period08/1/2908/1/31

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