A fully integrated 1 kb magnetoresistive random access memory with a double magnetic tunnel junction

Sumio Ikegawa; Yoshiaki Asao; Yoshiaki Saito; Shigeki Takahashi; Tadashi Kai; Kenji Tsuchida; Hiroaki Yoda

doi:10.1143/jjap.42.l745

A fully integrated 1 kb magnetoresistive random access memory with a double magnetic tunnel junction

Sumio Ikegawa, Yoshiaki Asao, Yoshiaki Saito, Shigeki Takahashi, Tadashi Kai, Kenji Tsuchida, Hiroaki Yoda

研究成果: Article › 査読

14 被引用数 (Scopus)

抄録

A 1 kb magnetoresistive random access memory (MRAM) is demonstrated with a 0.4 × 1.2μm² magnetic tunnel junction (MTJ) and 0.18 μm complementary metal-oxide-semiconductor (CMOS) technology. In this study, a double MTJ, which is designed to have a larger signal margin than a conventional MTJ, is used. The uniformity of resistance for a double MTJ is comparable to that of a single MTJ and is expected to be better than a single MTJ if process conditions are optimized. The magnetic design of the MTJ provided a good astroid curve and resulted in 90% of bits working towards a relatively broad range of bit-line voltage and word-line voltage.

本文言語	English
ページ（範囲）	L745-L747
ジャーナル	Japanese Journal of Applied Physics, Part 2: Letters
巻	42
号	7 A
DOI	https://doi.org/10.1143/jjap.42.l745
出版ステータス	Published - 2003 7月 1
外部発表	はい

ASJC Scopus subject areas

工学（全般）
物理学および天文学（全般）

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10.1143/jjap.42.l745

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abstract = "A 1 kb magnetoresistive random access memory (MRAM) is demonstrated with a 0.4 × 1.2μm2 magnetic tunnel junction (MTJ) and 0.18 μm complementary metal-oxide-semiconductor (CMOS) technology. In this study, a double MTJ, which is designed to have a larger signal margin than a conventional MTJ, is used. The uniformity of resistance for a double MTJ is comparable to that of a single MTJ and is expected to be better than a single MTJ if process conditions are optimized. The magnetic design of the MTJ provided a good astroid curve and resulted in 90% of bits working towards a relatively broad range of bit-line voltage and word-line voltage.",

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AU - Ikegawa, Sumio

AU - Asao, Yoshiaki

AU - Saito, Yoshiaki

AU - Takahashi, Shigeki

AU - Kai, Tadashi

AU - Tsuchida, Kenji

AU - Yoda, Hiroaki

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N2 - A 1 kb magnetoresistive random access memory (MRAM) is demonstrated with a 0.4 × 1.2μm2 magnetic tunnel junction (MTJ) and 0.18 μm complementary metal-oxide-semiconductor (CMOS) technology. In this study, a double MTJ, which is designed to have a larger signal margin than a conventional MTJ, is used. The uniformity of resistance for a double MTJ is comparable to that of a single MTJ and is expected to be better than a single MTJ if process conditions are optimized. The magnetic design of the MTJ provided a good astroid curve and resulted in 90% of bits working towards a relatively broad range of bit-line voltage and word-line voltage.

AB - A 1 kb magnetoresistive random access memory (MRAM) is demonstrated with a 0.4 × 1.2μm2 magnetic tunnel junction (MTJ) and 0.18 μm complementary metal-oxide-semiconductor (CMOS) technology. In this study, a double MTJ, which is designed to have a larger signal margin than a conventional MTJ, is used. The uniformity of resistance for a double MTJ is comparable to that of a single MTJ and is expected to be better than a single MTJ if process conditions are optimized. The magnetic design of the MTJ provided a good astroid curve and resulted in 90% of bits working towards a relatively broad range of bit-line voltage and word-line voltage.

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KW - Double junction

KW - MRAM

KW - Magnetic tunnel junction

KW - Memory

KW - Tunnel magnetoresistance

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A fully integrated 1 kb magnetoresistive random access memory with a double magnetic tunnel junction

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