A new fabrication technology of FinFETs using a neutral beam etching

Kazuhikp Endo; Shuichi Noda; Takuya Ozaki; Seiji Samukawa; Meishoku Masahata; Yongxun Liu; Kenichi Ishii; Hidenori Takashima; Etsuro Sugimata; Takashi Matsukawa; Yuki Yamauchi; Yuki Ishikawa; Eiichi Suzuki

doi:10.1109/imnc.2005.203821

A new fabrication technology of FinFETs using a neutral beam etching

Kazuhikp Endo, Shuichi Noda, Takuya Ozaki, Seiji Samukawa, Meishoku Masahata, Yongxun Liu, Kenichi Ishii, Hidenori Takashima, Etsuro Sugimata, Takashi Matsukawa, Yuki Yamauchi, Yuki Ishikawa, Eiichi Suzuki

流体科学研究所・附属統合流動科学国際研究教育センター

研究成果: 書籍の章/レポート/Proceedings › 会議への寄与 › 査読

抄録

Rectangular Si-Fin channel and Si-FinFETs were successfully fabricated to take advantage of the low-energy and damage-free characteristic of the newly proposed neutral beam etching system.

本文言語	英語
ホスト出版物のタイトル	Digest of Papers - Microprocesses and Nanotechnology 2005
ホスト出版物のサブタイトル	2005 International Microprocesses and Nanotechnology Conference
出版社	IEEE Computer Society
ページ	228-229
ページ数	2
ISBN（印刷版）	4990247221, 9784990247225
DOI	https://doi.org/10.1109/imnc.2005.203821
出版ステータス	出版済み - 2005
イベント	2005 International Microprocesses and Nanotechnology Conference - Tokyo, 日本継続期間: 2005 10月 25 → 2005 10月 28

出版物シリーズ

名前	Digest of Papers - Microprocesses and Nanotechnology 2005: 2005 International Microprocesses and Nanotechnology Conference
巻	2005

会議

会議	2005 International Microprocesses and Nanotechnology Conference
国/地域	日本
City	Tokyo
Period	05/10/25 → 05/10/28

文献へのアクセス

10.1109/imnc.2005.203821

他のファイルとリンク

引用スタイル

Endo, K., Noda, S., Ozaki, T., Samukawa, S., Masahata, M., Liu, Y., Ishii, K., Takashima, H., Sugimata, E., Matsukawa, T., Yamauchi, Y., Ishikawa, Y., & Suzuki, E. (2005). A new fabrication technology of FinFETs using a neutral beam etching. In Digest of Papers - Microprocesses and Nanotechnology 2005: 2005 International Microprocesses and Nanotechnology Conference (pp. 228-229). Article 1595297 (Digest of Papers - Microprocesses and Nanotechnology 2005: 2005 International Microprocesses and Nanotechnology Conference; Vol. 2005). IEEE Computer Society. https://doi.org/10.1109/imnc.2005.203821

Endo, Kazuhikp ; Noda, Shuichi ; Ozaki, Takuya その他. / A new fabrication technology of FinFETs using a neutral beam etching. Digest of Papers - Microprocesses and Nanotechnology 2005: 2005 International Microprocesses and Nanotechnology Conference. IEEE Computer Society, 2005. pp. 228-229 (Digest of Papers - Microprocesses and Nanotechnology 2005: 2005 International Microprocesses and Nanotechnology Conference).

@inproceedings{df1b180b694645e8ad6b1603fa5ace36,

title = "A new fabrication technology of FinFETs using a neutral beam etching",

abstract = "Rectangular Si-Fin channel and Si-FinFETs were successfully fabricated to take advantage of the low-energy and damage-free characteristic of the newly proposed neutral beam etching system.",

author = "Kazuhikp Endo and Shuichi Noda and Takuya Ozaki and Seiji Samukawa and Meishoku Masahata and Yongxun Liu and Kenichi Ishii and Hidenori Takashima and Etsuro Sugimata and Takashi Matsukawa and Yuki Yamauchi and Yuki Ishikawa and Eiichi Suzuki",

year = "2005",

doi = "10.1109/imnc.2005.203821",

language = "English",

isbn = "4990247221",

series = "Digest of Papers - Microprocesses and Nanotechnology 2005: 2005 International Microprocesses and Nanotechnology Conference",

publisher = "IEEE Computer Society",

pages = "228--229",

booktitle = "Digest of Papers - Microprocesses and Nanotechnology 2005",

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note = "2005 International Microprocesses and Nanotechnology Conference ; Conference date: 25-10-2005 Through 28-10-2005",

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Endo, K, Noda, S, Ozaki, T, Samukawa, S, Masahata, M, Liu, Y, Ishii, K, Takashima, H, Sugimata, E, Matsukawa, T, Yamauchi, Y, Ishikawa, Y & Suzuki, E 2005, A new fabrication technology of FinFETs using a neutral beam etching. in Digest of Papers - Microprocesses and Nanotechnology 2005: 2005 International Microprocesses and Nanotechnology Conference., 1595297, Digest of Papers - Microprocesses and Nanotechnology 2005: 2005 International Microprocesses and Nanotechnology Conference, vol. 2005, IEEE Computer Society, pp. 228-229, 2005 International Microprocesses and Nanotechnology Conference, Tokyo, 日本, 05/10/25. https://doi.org/10.1109/imnc.2005.203821

A new fabrication technology of FinFETs using a neutral beam etching. / Endo, Kazuhikp; Noda, Shuichi; Ozaki, Takuya その他.
Digest of Papers - Microprocesses and Nanotechnology 2005: 2005 International Microprocesses and Nanotechnology Conference. IEEE Computer Society, 2005. p. 228-229 1595297 (Digest of Papers - Microprocesses and Nanotechnology 2005: 2005 International Microprocesses and Nanotechnology Conference; Vol. 2005).

研究成果: 書籍の章/レポート/Proceedings › 会議への寄与 › 査読

TY - GEN

T1 - A new fabrication technology of FinFETs using a neutral beam etching

AU - Endo, Kazuhikp

AU - Noda, Shuichi

AU - Ozaki, Takuya

AU - Samukawa, Seiji

AU - Masahata, Meishoku

AU - Liu, Yongxun

AU - Ishii, Kenichi

AU - Takashima, Hidenori

AU - Sugimata, Etsuro

AU - Matsukawa, Takashi

AU - Yamauchi, Yuki

AU - Ishikawa, Yuki

AU - Suzuki, Eiichi

PY - 2005

Y1 - 2005

N2 - Rectangular Si-Fin channel and Si-FinFETs were successfully fabricated to take advantage of the low-energy and damage-free characteristic of the newly proposed neutral beam etching system.

AB - Rectangular Si-Fin channel and Si-FinFETs were successfully fabricated to take advantage of the low-energy and damage-free characteristic of the newly proposed neutral beam etching system.

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U2 - 10.1109/imnc.2005.203821

DO - 10.1109/imnc.2005.203821

M3 - Conference contribution

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SN - 4990247221

SN - 9784990247225

T3 - Digest of Papers - Microprocesses and Nanotechnology 2005: 2005 International Microprocesses and Nanotechnology Conference

SP - 228

EP - 229

BT - Digest of Papers - Microprocesses and Nanotechnology 2005

PB - IEEE Computer Society

T2 - 2005 International Microprocesses and Nanotechnology Conference

Y2 - 25 October 2005 through 28 October 2005

ER -

Endo K, Noda S, Ozaki T, Samukawa S, Masahata M, Liu Y その他. A new fabrication technology of FinFETs using a neutral beam etching. In Digest of Papers - Microprocesses and Nanotechnology 2005: 2005 International Microprocesses and Nanotechnology Conference. IEEE Computer Society. 2005. p. 228-229. 1595297. (Digest of Papers - Microprocesses and Nanotechnology 2005: 2005 International Microprocesses and Nanotechnology Conference). doi: 10.1109/imnc.2005.203821

A new fabrication technology of FinFETs using a neutral beam etching

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