Accurate circuit performance prediction model and lifetime prediction method of NBT stressed devices for highly reliable ULSI circuits

Rihito Kuroda, Kazufumi Watanabe, Akinobu Teramoto, Michihiko Mifuji, Takahisa Yamaha, Shigetoshi Sugawa, Tadahiro Ohmi

研究成果: 書籍の章/レポート/Proceedings会議への寄与査読

抄録

An accurate circuit performance prediction model and a device lifetime prediction method of negative bias temperature (NBT) stressed devices are proposed in this paper. The proposed model is constituted of a threshold voltage (Vth) shift and a drain current (ID) reduction. The models can directly link the electrical characteristics degradation to the circuit simulation, thus enable us to design highly reliable ULSI circuits. The circuit performance prediction is confirmed by the experimental data of the oscillation frequency degradation and waveform variation of ring oscillator. The simulation results are in good agreement with the experimental results. Since only a suitable acceleration method allows us to develop the accurate models, the new negative bias temperature instability (NBTI) acceleration method using cold-holes is also developed. The very small saturation value of Vth shift (<10mV) is observed. The detail of this physics is discussed in this paper. Finally, we demonstrate the accurate NBTI lifetime prediction using the new method.

本文言語英語
ホスト出版物のタイトルIEEE International Electron Devices Meeting, 2005 IEDM - Technical Digest
ページ700-703
ページ数4
出版ステータス出版済み - 2005
イベントIEEE International Electron Devices Meeting, 2005 IEDM - Washington, DC, MD, 米国
継続期間: 2005 12月 52005 12月 7

出版物シリーズ

名前Technical Digest - International Electron Devices Meeting, IEDM
2005
ISSN(印刷版)0163-1918

会議

会議IEEE International Electron Devices Meeting, 2005 IEDM
国/地域米国
CityWashington, DC, MD
Period05/12/505/12/7

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