TY - GEN
T1 - Adhesion and nucleation property of CVD-Cu with ALD-Co(W) film as Cu diffusion barrier and adhesion promoting layer in future ULSI interconnects
AU - Shima, K.
AU - Shimizu, H.
AU - Momose, T.
AU - Shimogaki, Y.
PY - 2012/12/1
Y1 - 2012/12/1
N2 - 1) Using Cu(hfacXtmvs) and Ru, we can form ultra thin and continuous CVD-Cu film with good adhesion strength. 2) Co(W) shows good adhesion strength with CVD-Cu as Ru when Cu was deposited by O and F free precursor. 3) To utilize Co(W) as barrier layer, [Cu(sBu-Me-amd)]2 will be required. But, its nucleation property have to be enhanced. (ex. by some catalytic agent such as CVD-Mn).
AB - 1) Using Cu(hfacXtmvs) and Ru, we can form ultra thin and continuous CVD-Cu film with good adhesion strength. 2) Co(W) shows good adhesion strength with CVD-Cu as Ru when Cu was deposited by O and F free precursor. 3) To utilize Co(W) as barrier layer, [Cu(sBu-Me-amd)]2 will be required. But, its nucleation property have to be enhanced. (ex. by some catalytic agent such as CVD-Mn).
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M3 - Conference contribution
AN - SCOPUS:84878093240
SN - 9781622769995
T3 - Advanced Metallization Conference (AMC)
SP - 20
EP - 28
BT - Advanced Metallization Conference 2012
T2 - Advanced Metallization Conference 2012
Y2 - 9 October 2012 through 11 October 2012
ER -