TY - JOUR
T1 - Advantage of radical oxidation for improving reliability of ultra-thin gate oxide
AU - Saito, Yuji
AU - Sekine, Katsuyuki
AU - Ueda, Naoki
AU - Hirayama, Masaki
AU - Sugawa, Shigetoshi
AU - Ohmi, Tadahiro
N1 - Copyright:
Copyright 2004 Elsevier Science B.V., Amsterdam. All rights reserved.
PY - 2000
Y1 - 2000
N2 - This paper focuses attention on advantage of oxygen radical oxidation by microwave-excited high-density Kr/O2 plasma for improving disadvantages of conventional thermal oxidation process using H2O and/or O2 molecule, and demonstrates that Kr/O2 plasma oxidation process can improve thickness variation on shallow-trench isolation and integrity of silicon oxide not only on (100) surface but also on (111) surface compared to those of conventional thermal oxidation process.
AB - This paper focuses attention on advantage of oxygen radical oxidation by microwave-excited high-density Kr/O2 plasma for improving disadvantages of conventional thermal oxidation process using H2O and/or O2 molecule, and demonstrates that Kr/O2 plasma oxidation process can improve thickness variation on shallow-trench isolation and integrity of silicon oxide not only on (100) surface but also on (111) surface compared to those of conventional thermal oxidation process.
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UR - http://www.scopus.com/inward/citedby.url?scp=0033700295&partnerID=8YFLogxK
M3 - Conference article
AN - SCOPUS:0033700295
SN - 0743-1562
SP - 176
EP - 177
JO - Digest of Technical Papers - Symposium on VLSI Technology
JF - Digest of Technical Papers - Symposium on VLSI Technology
T2 - 2000 Symposium on VLSI Technology
Y2 - 13 June 2000 through 15 June 2000
ER -