We have fabricated dual-gate AlGaN/GaN high-electron-mobility transistors (HEMTs) with a short gate on SiC substrates for use in high-power mixers and have measured their pulse modulation characteristics. A device with a T-shaped gate (0.15 μm × 200 μm) modulates a 24-GHz local (LO) signal with 0.4-ns-wide pulses. The peak output power is as high as 8.9 dBm and the bandwidth is over 2 GHz. These results indicate that this high-power mixer can directly drive an antenna and is applicable for 24-GHz ultra-wideband (UWB) applications.
|ジャーナル||IEEE MTT-S International Microwave Symposium Digest|
|出版ステータス||Published - 2006 12月 1|
|イベント||2006 IEEE MTT-S International Microwave Symposium Digest - San Francisco, CA, United States|
継続期間: 2006 6月 11 → 2006 6月 16
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