AlGaN/GaN dual-gate HEMT mixers for 24 GHz pulse-modulation

Kenji Shiojima; Takashi Makimura; Toshihiko Kosugi; Tetsuya Suemitsu; Naoteru Shigekawa; Masanobu Hiroki; Haruki Yokoyama

doi:10.1109/MWSYM.2006.249494

AlGaN/GaN dual-gate HEMT mixers for 24 GHz pulse-modulation

Kenji Shiojima, Takashi Makimura, Toshihiko Kosugi, Tetsuya Suemitsu, Naoteru Shigekawa, Masanobu Hiroki, Haruki Yokoyama

研究成果: Conference article › 査読

3 被引用数 (Scopus)

抄録

We have fabricated dual-gate AlGaN/GaN high-electron-mobility transistors (HEMTs) with a short gate on SiC substrates for use in high-power mixers and have measured their pulse modulation characteristics. A device with a T-shaped gate (0.15 μm × 200 μm) modulates a 24-GHz local (LO) signal with 0.4-ns-wide pulses. The peak output power is as high as 8.9 dBm and the bandwidth is over 2 GHz. These results indicate that this high-power mixer can directly drive an antenna and is applicable for 24-GHz ultra-wideband (UWB) applications.

本文言語	English
論文番号	4015170
ページ（範囲）	1331-1334
ページ数	4
ジャーナル	IEEE MTT-S International Microwave Symposium Digest
DOI	https://doi.org/10.1109/MWSYM.2006.249494
出版ステータス	Published - 2006 12月 1
外部発表	はい
イベント	2006 IEEE MTT-S International Microwave Symposium Digest - San Francisco, CA, United States 継続期間: 2006 6月 11 → 2006 6月 16

ASJC Scopus subject areas

放射線
凝縮系物理学
電子工学および電気工学

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10.1109/MWSYM.2006.249494

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title = "AlGaN/GaN dual-gate HEMT mixers for 24 GHz pulse-modulation",

abstract = "We have fabricated dual-gate AlGaN/GaN high-electron-mobility transistors (HEMTs) with a short gate on SiC substrates for use in high-power mixers and have measured their pulse modulation characteristics. A device with a T-shaped gate (0.15 μm × 200 μm) modulates a 24-GHz local (LO) signal with 0.4-ns-wide pulses. The peak output power is as high as 8.9 dBm and the bandwidth is over 2 GHz. These results indicate that this high-power mixer can directly drive an antenna and is applicable for 24-GHz ultra-wideband (UWB) applications.",

keywords = "Microwave mixers, Power MODFETs, Power semiconductor devices, Pulse modulation, Semiconductor device fabrication",

author = "Kenji Shiojima and Takashi Makimura and Toshihiko Kosugi and Tetsuya Suemitsu and Naoteru Shigekawa and Masanobu Hiroki and Haruki Yokoyama",

year = "2006",

month = dec,

day = "1",

doi = "10.1109/MWSYM.2006.249494",

language = "English",

pages = "1331--1334",

journal = "IEEE MTT-S International Microwave Symposium Digest",

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publisher = "Institute of Electrical and Electronics Engineers Inc.",

note = "2006 IEEE MTT-S International Microwave Symposium Digest ; Conference date: 11-06-2006 Through 16-06-2006",

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TY - JOUR

T1 - AlGaN/GaN dual-gate HEMT mixers for 24 GHz pulse-modulation

AU - Shiojima, Kenji

AU - Makimura, Takashi

AU - Kosugi, Toshihiko

AU - Suemitsu, Tetsuya

AU - Shigekawa, Naoteru

AU - Hiroki, Masanobu

AU - Yokoyama, Haruki

PY - 2006/12/1

Y1 - 2006/12/1

N2 - We have fabricated dual-gate AlGaN/GaN high-electron-mobility transistors (HEMTs) with a short gate on SiC substrates for use in high-power mixers and have measured their pulse modulation characteristics. A device with a T-shaped gate (0.15 μm × 200 μm) modulates a 24-GHz local (LO) signal with 0.4-ns-wide pulses. The peak output power is as high as 8.9 dBm and the bandwidth is over 2 GHz. These results indicate that this high-power mixer can directly drive an antenna and is applicable for 24-GHz ultra-wideband (UWB) applications.

AB - We have fabricated dual-gate AlGaN/GaN high-electron-mobility transistors (HEMTs) with a short gate on SiC substrates for use in high-power mixers and have measured their pulse modulation characteristics. A device with a T-shaped gate (0.15 μm × 200 μm) modulates a 24-GHz local (LO) signal with 0.4-ns-wide pulses. The peak output power is as high as 8.9 dBm and the bandwidth is over 2 GHz. These results indicate that this high-power mixer can directly drive an antenna and is applicable for 24-GHz ultra-wideband (UWB) applications.

KW - Microwave mixers

KW - Power MODFETs

KW - Power semiconductor devices

KW - Pulse modulation

KW - Semiconductor device fabrication

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EP - 1334

JO - IEEE MTT-S International Microwave Symposium Digest

JF - IEEE MTT-S International Microwave Symposium Digest

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AlGaN/GaN dual-gate HEMT mixers for 24 GHz pulse-modulation

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