In this report, we investigated conditions to deposit stoichiometric aluminium nitride (AlN) thin films grown on (100)-oriented Si substrates under various Ar/N2 gas flow rates at a wide range of temperature from room temperature (RT) to 350°C using electron cyclotron resonance (ECR) reactive sputtering. This study revealed that stoichiometric of thin film can be controlled by N2/Ar flow rate and that stoichiometric N/Al 1 was archived at N2/Ar 2. This study also revealed that crystallinity can be controlled by substrate temperature. From RT to 200°C, thin films were amorphous or poly-crystal, at 350°C however, thin film was mainly  and  AlN. Obtained thin films are densely packed and have very low root mean square (RMS) roughness of 0.41 nm which is much less than other sputtering methods.
|ジャーナル||Journal of Physics: Conference Series|
|出版ステータス||出版済み - 2014|
|イベント||14th International Conference on Micro- and Nano-Technology for Power Generation and Energy Conversion Applications, PowerMEMS 2014 - Awaji Island, Hyogo, 日本|
継続期間: 2014 11月 18 → 2014 11月 21