AlN thin film growth using electron cyclotron resonance reactive sputtering

N. H. Hung, H. Oguchi, H. Kuwano

研究成果: ジャーナルへの寄稿会議記事査読

2 被引用数 (Scopus)


In this report, we investigated conditions to deposit stoichiometric aluminium nitride (AlN) thin films grown on (100)-oriented Si substrates under various Ar/N2 gas flow rates at a wide range of temperature from room temperature (RT) to 350°C using electron cyclotron resonance (ECR) reactive sputtering. This study revealed that stoichiometric of thin film can be controlled by N2/Ar flow rate and that stoichiometric N/Al 1 was archived at N2/Ar 2. This study also revealed that crystallinity can be controlled by substrate temperature. From RT to 200°C, thin films were amorphous or poly-crystal, at 350°C however, thin film was mainly [110] and [100] AlN. Obtained thin films are densely packed and have very low root mean square (RMS) roughness of 0.41 nm which is much less than other sputtering methods.

ジャーナルJournal of Physics: Conference Series
出版ステータス出版済み - 2014
イベント14th International Conference on Micro- and Nano-Technology for Power Generation and Energy Conversion Applications, PowerMEMS 2014 - Awaji Island, Hyogo, 日本
継続期間: 2014 11月 182014 11月 21


「AlN thin film growth using electron cyclotron resonance reactive sputtering」の研究トピックを掘り下げます。これらがまとまってユニークなフィンガープリントを構成します。