An Accurate Model of Subbreakdown Due to Bandto-Band Tunneling and Some Applications

Tetsuo Endoh; Riichiroh Shirota; Masaki Momodomi; Fujio Masuoka

doi:10.1109/16.43828

An Accurate Model of Subbreakdown Due to Bandto-Band Tunneling and Some Applications

Tetsuo Endoh, Riichiroh Shirota, Masaki Momodomi, Fujio Masuoka

研究成果: Article › 査読

11 被引用数 (Scopus)

抄録

This paper describes an accurate new model for and a numerical analysis of the subbreakdown phenomenon due to band-to-band tunneling in a thin-gate-oxide n-MOSFET. Results calculated by this model agree well with experimental results. This new model provides a good understanding of the subbreakdown phenomenon. Furthermore, it is shown by this model how to design the distribution of impurity density in the drain region in order to suppress the subbreakdown current.

本文言語	English
ページ（範囲）	290-296
ページ数	7
ジャーナル	IEEE Transactions on Electron Devices
巻	37
号	1
DOI	https://doi.org/10.1109/16.43828
出版ステータス	Published - 1990 1月
外部発表	はい

ASJC Scopus subject areas

電子材料、光学材料、および磁性材料
電子工学および電気工学

文献へのアクセス

10.1109/16.43828

他のファイルとリンク

引用スタイル

@article{cab80aba54d445f2bad58fe26672c1f6,

title = "An Accurate Model of Subbreakdown Due to Bandto-Band Tunneling and Some Applications",

abstract = "This paper describes an accurate new model for and a numerical analysis of the subbreakdown phenomenon due to band-to-band tunneling in a thin-gate-oxide n-MOSFET. Results calculated by this model agree well with experimental results. This new model provides a good understanding of the subbreakdown phenomenon. Furthermore, it is shown by this model how to design the distribution of impurity density in the drain region in order to suppress the subbreakdown current.",

author = "Tetsuo Endoh and Riichiroh Shirota and Masaki Momodomi and Fujio Masuoka",

year = "1990",

month = jan,

doi = "10.1109/16.43828",

language = "English",

volume = "37",

pages = "290--296",

journal = "IEEE Transactions on Electron Devices",

issn = "0018-9383",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

number = "1",

}

TY - JOUR

T1 - An Accurate Model of Subbreakdown Due to Bandto-Band Tunneling and Some Applications

AU - Endoh, Tetsuo

AU - Shirota, Riichiroh

AU - Momodomi, Masaki

AU - Masuoka, Fujio

PY - 1990/1

Y1 - 1990/1

N2 - This paper describes an accurate new model for and a numerical analysis of the subbreakdown phenomenon due to band-to-band tunneling in a thin-gate-oxide n-MOSFET. Results calculated by this model agree well with experimental results. This new model provides a good understanding of the subbreakdown phenomenon. Furthermore, it is shown by this model how to design the distribution of impurity density in the drain region in order to suppress the subbreakdown current.

AB - This paper describes an accurate new model for and a numerical analysis of the subbreakdown phenomenon due to band-to-band tunneling in a thin-gate-oxide n-MOSFET. Results calculated by this model agree well with experimental results. This new model provides a good understanding of the subbreakdown phenomenon. Furthermore, it is shown by this model how to design the distribution of impurity density in the drain region in order to suppress the subbreakdown current.

UR - http://www.scopus.com/inward/record.url?scp=0025207780&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0025207780&partnerID=8YFLogxK

U2 - 10.1109/16.43828

DO - 10.1109/16.43828

M3 - Article

AN - SCOPUS:0025207780

SN - 0018-9383

VL - 37

SP - 290

EP - 296

JO - IEEE Transactions on Electron Devices

JF - IEEE Transactions on Electron Devices

IS - 1

ER -

An Accurate Model of Subbreakdown Due to Bandto-Band Tunneling and Some Applications

抄録

ASJC Scopus subject areas

文献へのアクセス

他のファイルとリンク

フィンガープリント

引用スタイル