Analyzing oxygen and silicon incorporation in GaN microstructures composed of c-planes and angled facets by confocal magneto-photoluminescence microscopy

Akinori Kamiyama, Kazunobu Kojima, Shigefusa F. Chichibu, Go Yusa

研究成果: Article査読

抄録

Unintentionally doped impurities formed in the microstructures of free-standing GaN grown with facets were studied using confocal magneto-photoluminescence (PL) microscopy. Donor-bound exciton related peaks in PL spectra and their magnetic behavior allowed us to distinguish typical donor impurity atoms, such as silicon and oxygen. Combining this technique with confocal microscopy also revealed the spatial distribution of the impurities. The results showed that angled facets tend to incorporate oxygen.

本文言語English
論文番号035215
ジャーナルAIP Advances
10
3
DOI
出版ステータスPublished - 2020 3月 1

ASJC Scopus subject areas

  • 物理学および天文学(全般)

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