TY - JOUR
T1 - Atom-probe analysis of SiC
AU - Nakamura, S.
AU - Hashizume, T.
AU - Hasegawa, Y.
AU - Sakurai, T.
N1 - Funding Information:
We wish to thank Dr. Setaka, National Research Institute for Inorganic Materials, for providing 2H-SiC whiskers. Critical reading of the manuscript by K.A. Sakurai is greatly appreciated. This work was supported in part by a Scientific Research Grant-in-Aid for Special Project Research on "Alloy Semiconductor Electronics", from the Ministry of Education, Science, and Culture of Japan.
PY - 1986/7/2
Y1 - 1986/7/2
N2 - SiC, a semiconductor the interest in which has been revived recently, has been successfully studied by a time-of-flight atom probe. The evaporation field for SiC was determined to the approximately 5.1 V/A in the presence of He at 20 K. Although a satisfactory result was difficult to obtain using a high-voltage pulse mode, because of its high resistivity, a laser-pulse mode has yielded a stoichiometrically correct composition.
AB - SiC, a semiconductor the interest in which has been revived recently, has been successfully studied by a time-of-flight atom probe. The evaporation field for SiC was determined to the approximately 5.1 V/A in the presence of He at 20 K. Although a satisfactory result was difficult to obtain using a high-voltage pulse mode, because of its high resistivity, a laser-pulse mode has yielded a stoichiometrically correct composition.
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U2 - 10.1016/0039-6028(86)90494-2
DO - 10.1016/0039-6028(86)90494-2
M3 - Article
AN - SCOPUS:46149130817
SN - 0039-6028
VL - 172
SP - L551-L554
JO - Surface Science
JF - Surface Science
IS - 3
ER -