TY - GEN
T1 - Atomic Diffusion Bonding of Wafers using Thin Nb Films
AU - Uomoto, M.
AU - Shimatsu, T.
PY - 2019/5
Y1 - 2019/5
N2 - This study examined atomic diffusion bonding of Si wafers in vacuum using Thin Nb films. Wafers were bonded with no vacancies at the bonded Nb/Nb interface. Surface free energy at the bonded interface was greater than 1.5 J/m, as determined by the adhesion strength of Nb films on wafers.
AB - This study examined atomic diffusion bonding of Si wafers in vacuum using Thin Nb films. Wafers were bonded with no vacancies at the bonded Nb/Nb interface. Surface free energy at the bonded interface was greater than 1.5 J/m, as determined by the adhesion strength of Nb films on wafers.
UR - http://www.scopus.com/inward/record.url?scp=85068425504&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=85068425504&partnerID=8YFLogxK
U2 - 10.23919/LTB-3D.2019.8735105
DO - 10.23919/LTB-3D.2019.8735105
M3 - Conference contribution
AN - SCOPUS:85068425504
T3 - Proceedings of 2019 6th International Workshop on Low Temperature Bonding for 3D Integration, LTB-3D 2019
BT - Proceedings of 2019 6th International Workshop on Low Temperature Bonding for 3D Integration, LTB-3D 2019
PB - Institute of Electrical and Electronics Engineers Inc.
T2 - 6th International Workshop on Low Temperature Bonding for 3D Integration, LTB-3D 2019
Y2 - 21 May 2019 through 25 May 2019
ER -