Au/SiO2 hybrid bonding with 6-μm-pitch au electrodes for 3D structured image sensors

Yuki Honda; Kei Hagiwara; Masahide Goto; Toshihisa Watabe; Masakazu Nanba; Yoshinori Iguchi; Takuya Saraya; Masaharu Kobayashi; Hiroshi Toshiyoshi; Eiji Higurashi; Toshiro Hiramoto

doi:10.1149/07509.0103ecst

Au/SiO₂ hybrid bonding with 6-μm-pitch au electrodes for 3D structured image sensors

Yuki Honda, Kei Hagiwara, Masahide Goto, Toshihisa Watabe, Masakazu Nanba, Yoshinori Iguchi, Takuya Saraya, Masaharu Kobayashi, Hiroshi Toshiyoshi, Eiji Higurashi, Toshiro Hiramoto

研究成果: Conference contribution

抄録

A 3D structured CMOS image sensor that can process signals pixel-wise in parallel is investigated as a means to simultaneously increase the pixel count and the frame rate. To make the pixel pitch finer, the Au electrode dimension is reduced to a 6-μm pitch that is electrically interconnected using a direct-bonding technique. We also develop a daisy-chain test device to examine the numerous interconnections. The experimental results show that the series of electrical interconnections exceeds 230,000 contacts, with the Au contact resistance for a single connection being ∼23.6 mω.

本文言語	English
ホスト出版物のタイトル	Semiconductor Wafer Bonding
ホスト出版物のサブタイトル	Science, Technology and Applications 14
編集者	T. Suga, H. Baumgart, F. Fournel, M. S. Goorsky, K. D. Hobart, R. Knechtel, C. S. Tan
出版社	Electrochemical Society Inc.
ページ	103-106
ページ数	4
版	9
ISBN（電子版）	9781607687269, 9781607687672, 9781607687689, 9781607687696, 9781607687702, 9781607687719, 9781607687726, 9781607687733, 9781607687740, 9781607687757, 9781607687771, 9781607687788, 9781607687795, 9781607687801, 9781607687818, 9781607687825, 9781607687832, 9781607687849, 9781607687856, 9781607687863, 9781607687887, 9781607687894, 9781607687900, 9781607687917, 9781607687924, 9781607687931, 9781607687948, 9781607687955, 9781607687962, 9781607687979, 9781607687986, 9781607687993, 9781607688006, 9781607688013, 9781607688020, 9781607688037
DOI	https://doi.org/10.1149/07509.0103ecst
出版ステータス	Published - 2016
外部発表	はい
イベント	Symposium on Semiconductor Wafer Bonding: Science, Technology and Applications 14 - PRiME 2016/230th ECS Meeting - Honolulu, United States 継続期間: 2016 10月 2 → 2016 10月 7

出版物シリーズ

名前	ECS Transactions
番号	9
巻	75
ISSN（印刷版）	1938-6737
ISSN（電子版）	1938-5862

Other

Other	Symposium on Semiconductor Wafer Bonding: Science, Technology and Applications 14 - PRiME 2016/230th ECS Meeting
国/地域	United States
City	Honolulu
Period	16/10/2 → 16/10/7

ASJC Scopus subject areas

工学（全般）

文献へのアクセス

10.1149/07509.0103ecst

他のファイルとリンク

引用スタイル

Honda, Y., Hagiwara, K., Goto, M., Watabe, T., Nanba, M., Iguchi, Y., Saraya, T., Kobayashi, M., Toshiyoshi, H., Higurashi, E., & Hiramoto, T. (2016). Au/SiO₂ hybrid bonding with 6-μm-pitch au electrodes for 3D structured image sensors. In T. Suga, H. Baumgart, F. Fournel, M. S. Goorsky, K. D. Hobart, R. Knechtel, & C. S. Tan (Eds.), Semiconductor Wafer Bonding: Science, Technology and Applications 14 (9 ed., pp. 103-106). (ECS Transactions; Vol. 75, No. 9). Electrochemical Society Inc.. https://doi.org/10.1149/07509.0103ecst

Au/SiO₂ hybrid bonding with 6-μm-pitch au electrodes for 3D structured image sensors. / Honda, Yuki; Hagiwara, Kei; Goto, Masahide その他.
Semiconductor Wafer Bonding: Science, Technology and Applications 14. ed. / T. Suga; H. Baumgart; F. Fournel; M. S. Goorsky; K. D. Hobart; R. Knechtel; C. S. Tan. 9. ed. Electrochemical Society Inc., 2016. p. 103-106 (ECS Transactions; Vol. 75, No. 9).

研究成果: Conference contribution

Honda, Y, Hagiwara, K, Goto, M, Watabe, T, Nanba, M, Iguchi, Y, Saraya, T, Kobayashi, M, Toshiyoshi, H, Higurashi, E & Hiramoto, T 2016, Au/SiO₂ hybrid bonding with 6-μm-pitch au electrodes for 3D structured image sensors. in T Suga, H Baumgart, F Fournel, MS Goorsky, KD Hobart, R Knechtel & CS Tan (eds), Semiconductor Wafer Bonding: Science, Technology and Applications 14. 9 edn, ECS Transactions, no. 9, vol. 75, Electrochemical Society Inc., pp. 103-106, Symposium on Semiconductor Wafer Bonding: Science, Technology and Applications 14 - PRiME 2016/230th ECS Meeting, Honolulu, United States, 16/10/2. https://doi.org/10.1149/07509.0103ecst

Honda Y, Hagiwara K, Goto M, Watabe T, Nanba M, Iguchi Y その他. Au/SiO₂ hybrid bonding with 6-μm-pitch au electrodes for 3D structured image sensors. In Suga T, Baumgart H, Fournel F, Goorsky MS, Hobart KD, Knechtel R, Tan CS, editors, Semiconductor Wafer Bonding: Science, Technology and Applications 14. 9 ed. Electrochemical Society Inc. 2016. p. 103-106. (ECS Transactions; 9). doi: 10.1149/07509.0103ecst

Honda, Yuki ; Hagiwara, Kei ; Goto, Masahide その他. / Au/SiO₂ hybrid bonding with 6-μm-pitch au electrodes for 3D structured image sensors. Semiconductor Wafer Bonding: Science, Technology and Applications 14. editor / T. Suga ; H. Baumgart ; F. Fournel ; M. S. Goorsky ; K. D. Hobart ; R. Knechtel ; C. S. Tan. 9. ed. Electrochemical Society Inc., 2016. pp. 103-106 (ECS Transactions; 9).

@inproceedings{309af992290e4c7bb21d5df426d14175,

title = "Au/SiO2 hybrid bonding with 6-μm-pitch au electrodes for 3D structured image sensors",

abstract = "A 3D structured CMOS image sensor that can process signals pixel-wise in parallel is investigated as a means to simultaneously increase the pixel count and the frame rate. To make the pixel pitch finer, the Au electrode dimension is reduced to a 6-μm pitch that is electrically interconnected using a direct-bonding technique. We also develop a daisy-chain test device to examine the numerous interconnections. The experimental results show that the series of electrical interconnections exceeds 230,000 contacts, with the Au contact resistance for a single connection being ∼23.6 mω.",

author = "Yuki Honda and Kei Hagiwara and Masahide Goto and Toshihisa Watabe and Masakazu Nanba and Yoshinori Iguchi and Takuya Saraya and Masaharu Kobayashi and Hiroshi Toshiyoshi and Eiji Higurashi and Toshiro Hiramoto",

note = "Publisher Copyright: {\textcopyright} 2016 The Electrochemical Society.; Symposium on Semiconductor Wafer Bonding: Science, Technology and Applications 14 - PRiME 2016/230th ECS Meeting ; Conference date: 02-10-2016 Through 07-10-2016",

year = "2016",

doi = "10.1149/07509.0103ecst",

language = "English",

series = "ECS Transactions",

publisher = "Electrochemical Society Inc.",

number = "9",

pages = "103--106",

editor = "T. Suga and H. Baumgart and F. Fournel and Goorsky, {M. S.} and Hobart, {K. D.} and R. Knechtel and Tan, {C. S.}",

booktitle = "Semiconductor Wafer Bonding",

edition = "9",

}

TY - GEN

T1 - Au/SiO2 hybrid bonding with 6-μm-pitch au electrodes for 3D structured image sensors

AU - Honda, Yuki

AU - Hagiwara, Kei

AU - Goto, Masahide

AU - Watabe, Toshihisa

AU - Nanba, Masakazu

AU - Iguchi, Yoshinori

AU - Saraya, Takuya

AU - Kobayashi, Masaharu

AU - Toshiyoshi, Hiroshi

AU - Higurashi, Eiji

AU - Hiramoto, Toshiro

PY - 2016

Y1 - 2016

N2 - A 3D structured CMOS image sensor that can process signals pixel-wise in parallel is investigated as a means to simultaneously increase the pixel count and the frame rate. To make the pixel pitch finer, the Au electrode dimension is reduced to a 6-μm pitch that is electrically interconnected using a direct-bonding technique. We also develop a daisy-chain test device to examine the numerous interconnections. The experimental results show that the series of electrical interconnections exceeds 230,000 contacts, with the Au contact resistance for a single connection being ∼23.6 mω.

AB - A 3D structured CMOS image sensor that can process signals pixel-wise in parallel is investigated as a means to simultaneously increase the pixel count and the frame rate. To make the pixel pitch finer, the Au electrode dimension is reduced to a 6-μm pitch that is electrically interconnected using a direct-bonding technique. We also develop a daisy-chain test device to examine the numerous interconnections. The experimental results show that the series of electrical interconnections exceeds 230,000 contacts, with the Au contact resistance for a single connection being ∼23.6 mω.

UR - http://www.scopus.com/inward/record.url?scp=84991508689&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=84991508689&partnerID=8YFLogxK

U2 - 10.1149/07509.0103ecst

DO - 10.1149/07509.0103ecst

M3 - Conference contribution

AN - SCOPUS:84991508689

T3 - ECS Transactions

SP - 103

EP - 106

BT - Semiconductor Wafer Bonding

A2 - Suga, T.

A2 - Baumgart, H.

A2 - Fournel, F.

A2 - Goorsky, M. S.

A2 - Hobart, K. D.

A2 - Knechtel, R.

A2 - Tan, C. S.

PB - Electrochemical Society Inc.

T2 - Symposium on Semiconductor Wafer Bonding: Science, Technology and Applications 14 - PRiME 2016/230th ECS Meeting

Y2 - 2 October 2016 through 7 October 2016

ER -