@article{28fb33d2d7f84a3aad65eac2b25da80f,
title = "Band alignment at β -(AlxGa1- x)2O3/ β -Ga2O3 (100) interface fabricated by pulsed-laser deposition",
abstract = "High-quality β-(AlxGa1- x)2O3 (x = 0-0.37) films were epitaxially grown on β-Ga2O3 (100) substrates by oxygen-radical-assisted pulsed-laser deposition with repeating alternate ablation of single crystals of β-Ga2O3 and α-Al2O3. The bandgap was tuned from 4.55 ± 0.01 eV (x = 0) to 5.20 ± 0.02 eV (x = 0.37), where bowing behavior was observed. The band alignment at the β-(AlxGa1- x)2O3/β-Ga2O3 interfaces was found to be type-I with conduction- and valence-band offsets of 0.52 ± 0.08 eV (0.37 ± 0.08 eV) and 0.13 ± 0.07 eV (0.02 ± 0.07 eV) for x = 0.37 (0.27), respectively. The large conduction-band offsets are ascribed to the dominant contribution of the cation-site substitution to the conduction band.",
author = "Ryo Wakabayashi and Mai Hattori and Kohei Yoshimatsu and Koji Horiba and Hiroshi Kumigashira and Akira Ohtomo",
note = "Funding Information: The authors thank M. Tada of the Center for advanced Materials Analysis for assistance with AES and REELS measurements. This work was partly supported by MEXT Element Strategy Initiative to Form Core Research Center and a Grant-in-Aid for Scientific Research (Nos. 15H03881 and 16J09832) from the Japan Society for the Promotion of Science Foundation. R.W. acknowledges the financial support from JSPS. Publisher Copyright: {\textcopyright} 2018 Author(s).",
year = "2018",
month = jun,
day = "4",
doi = "10.1063/1.5027005",
language = "English",
volume = "112",
journal = "Applied Physics Letters",
issn = "0003-6951",
publisher = "American Institute of Physics Publising LLC",
number = "23",
}