TY - JOUR
T1 - Band bending measurement of HfO 2 /SiO 2 /Si capacitor with ultra-thin La 2 O 3 insertion by XPS
AU - Kakushima, K.
AU - Okamoto, K.
AU - Adachi, M.
AU - Tachi, K.
AU - Song, J.
AU - Sato, S.
AU - Kawanago, T.
AU - Ahmet, P.
AU - Tsutsui, K.
AU - Sugii, N.
AU - Hattori, T.
AU - Iwai, H.
N1 - Funding Information:
The authors would like to express sincere thanks to H. Nohira with Musashi Institute of Technology and E. Ikenaga with JASRI/SPring-8. The synchrotron radiation experiments were performed at the BL47XU in the SPring-8 with the approval of the Japan Synchrotron Radiation Research Institute (JASRI) (Proposal No. 2007A0005). This work is partially supported by NEDO.
PY - 2008/7/30
Y1 - 2008/7/30
N2 - The flat band voltage shifts of HfO 2 /SiO 2 /nSi capacitors with ultra-thin La 2 O 3 insertion at HfO 2 /SiO 2 interface have been confirmed using hard X-ray photoelectron spectroscopy (HX-PES). By increasing the amount of La 2 O 3 insertion, the binding energy of Si 1s core spectra increases, which means that the surface potential of Si substrate also increases. A voltage drop difference of HfO 2 and La 2 O 3 at SiO 2 interface can be estimated to be 0.40 V.
AB - The flat band voltage shifts of HfO 2 /SiO 2 /nSi capacitors with ultra-thin La 2 O 3 insertion at HfO 2 /SiO 2 interface have been confirmed using hard X-ray photoelectron spectroscopy (HX-PES). By increasing the amount of La 2 O 3 insertion, the binding energy of Si 1s core spectra increases, which means that the surface potential of Si substrate also increases. A voltage drop difference of HfO 2 and La 2 O 3 at SiO 2 interface can be estimated to be 0.40 V.
KW - Flat band voltage
KW - Hard X-ray photoemission spectroscopy (HX-PES)
KW - High-k
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U2 - 10.1016/j.apsusc.2008.02.177
DO - 10.1016/j.apsusc.2008.02.177
M3 - Article
AN - SCOPUS:45049086668
SN - 0169-4332
VL - 254
SP - 6106
EP - 6108
JO - Applied Surface Science
JF - Applied Surface Science
IS - 19
ER -