@article{aee30bb041f14b08a49fd5cec6f491b9,
title = "Bias dependence of spin injection/transport properties of a perpendicularly magnetized FePt/MgO/GaAs structure",
abstract = "We demonstrate injection and transport of perpendicularly spin-polarized electrons in an FePt/MgO/n-GaAs structure. Spin-polarized electrons were injected from a perpendicularly magnetized FePt layer into an n-GaAs layer through a MgO barrier and detected by spatially resolved Kerr rotation microscopy. By measuring the Hanle effect, we reveal that the injected/extracted spin polarizations drastically vary with bias voltages. A spin lifetime of 3.5 ns is obtained that is consistent with the result from pump-probe measurements. This direct observation of perpendicularly polarized spin injection and lateral transport is one step toward realizing future spintronic devices.",
author = "Rento Ohsugi and Yoji Kunihashi and Haruki Sanada and Makoto Kohda and Hideki Gotoh and Tetsuomi Sogawa and Junsaku Nitta",
note = "Funding Information: This work was supported by Grants-in-Aid for Scientific Research (15H05699, 15H02099, and 25220604) from the Japan Society for the Promotion of Science and by the ImPACT Program of Council for Science, Technology, and Innovation. JN acknowledges partial support from the Strategic Japanese-German Joint Research Program. Publisher Copyright: {\textcopyright} 2016 The Japan Society of Applied Physics.",
year = "2016",
month = apr,
doi = "10.7567/APEX.9.043002",
language = "English",
volume = "9",
journal = "Applied Physics Express",
issn = "1882-0778",
publisher = "Japan Society of Applied Physics",
number = "4",
}