C60 single crystal films on GaAs(001) surfaces

Qikun Xue, Y. Ling, T. Ogino, T. Sakata, Y. Hasegawa, T. Hashizume, H. Shinohara, T. Sakurai

研究成果: Article査読

21 被引用数 (Scopus)

抄録

We report on a scanning tunnelling microscopy (STM) study, with different C60 thin-film growth orientations, on As-rich 2×6 and 2×4 surfaces of GaAs(001) prepared by molecular beam epitaxy. On the 2×6 As surface, the corrugated potential of the 2×6 substrate forces the first monolayer to be strongly modified, resulting in the formation of a 'double-chain' commensurate structure. C60-substrate interaction, however, is limited to 2 or 3 monolayers from the interface and a competing intermolecular interaction governs the 3-dimensional growth of multiple-layer C60 FCC crystalline film. Even though both surfaces have similar strongly corrugated potentials, an unusual (110)-oriented C60 thin crystalline film grows on the 2×4 β phase. This novel growth can be understood in terms of a site-specific interaction between the substrate and the molecule and the interplay of the competing intermolecular interactions.

本文言語English
ページ(範囲)618-623
ページ数6
ジャーナルThin Solid Films
281-282
1-2
DOI
出版ステータスPublished - 1996 8月 1
外部発表はい

ASJC Scopus subject areas

  • 電子材料、光学材料、および磁性材料
  • 表面および界面
  • 表面、皮膜および薄膜
  • 金属および合金
  • 材料化学

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