TY - JOUR
T1 - C60 single crystal films on GaAs(001) surfaces
AU - Xue, Qikun
AU - Ling, Y.
AU - Ogino, T.
AU - Sakata, T.
AU - Hasegawa, Y.
AU - Hashizume, T.
AU - Shinohara, H.
AU - Sakurai, T.
PY - 1996/8/1
Y1 - 1996/8/1
N2 - We report on a scanning tunnelling microscopy (STM) study, with different C60 thin-film growth orientations, on As-rich 2×6 and 2×4 surfaces of GaAs(001) prepared by molecular beam epitaxy. On the 2×6 As surface, the corrugated potential of the 2×6 substrate forces the first monolayer to be strongly modified, resulting in the formation of a 'double-chain' commensurate structure. C60-substrate interaction, however, is limited to 2 or 3 monolayers from the interface and a competing intermolecular interaction governs the 3-dimensional growth of multiple-layer C60 FCC crystalline film. Even though both surfaces have similar strongly corrugated potentials, an unusual (110)-oriented C60 thin crystalline film grows on the 2×4 β phase. This novel growth can be understood in terms of a site-specific interaction between the substrate and the molecule and the interplay of the competing intermolecular interactions.
AB - We report on a scanning tunnelling microscopy (STM) study, with different C60 thin-film growth orientations, on As-rich 2×6 and 2×4 surfaces of GaAs(001) prepared by molecular beam epitaxy. On the 2×6 As surface, the corrugated potential of the 2×6 substrate forces the first monolayer to be strongly modified, resulting in the formation of a 'double-chain' commensurate structure. C60-substrate interaction, however, is limited to 2 or 3 monolayers from the interface and a competing intermolecular interaction governs the 3-dimensional growth of multiple-layer C60 FCC crystalline film. Even though both surfaces have similar strongly corrugated potentials, an unusual (110)-oriented C60 thin crystalline film grows on the 2×4 β phase. This novel growth can be understood in terms of a site-specific interaction between the substrate and the molecule and the interplay of the competing intermolecular interactions.
KW - Gallium arsenide
KW - Growth
KW - Scanning tunnelling microscopy (STM)
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U2 - 10.1016/0040-6090(96)08710-X
DO - 10.1016/0040-6090(96)08710-X
M3 - Article
AN - SCOPUS:0030217614
SN - 0040-6090
VL - 281-282
SP - 618
EP - 623
JO - Thin Solid Films
JF - Thin Solid Films
IS - 1-2
ER -