TY - GEN
T1 - Challenge of MTJ-based nonvolatile logic-in-memory architecture for ultra low-power and highly dependable VLSI computing
AU - Hanyu, Takahiro
AU - Natsui, Masanori
AU - Suzuki, Daisuke
AU - Mochizuki, Akira
AU - Onizawa, Naoya
AU - Ikeda, Shoji
AU - Endoh, Tetsuo
AU - Ohno, Hideo
PY - 2015/11/20
Y1 - 2015/11/20
N2 - Novel logic-LSI architecture, 'nonvolatile logic-in-memory (NV-LIM) architecture,' where nonvolatile storage elements are distributed over a logic-circuit plane, is proposed as a promising candidate to overcome performance wall and power wall due to the present CMOS-only-based logic LSIs. Some concrete design examples based on the NV-LIM architecture are demonstrated and their usefulness is discussed in comparison with the corresponding CMOS-only-based realization.
AB - Novel logic-LSI architecture, 'nonvolatile logic-in-memory (NV-LIM) architecture,' where nonvolatile storage elements are distributed over a logic-circuit plane, is proposed as a promising candidate to overcome performance wall and power wall due to the present CMOS-only-based logic LSIs. Some concrete design examples based on the NV-LIM architecture are demonstrated and their usefulness is discussed in comparison with the corresponding CMOS-only-based realization.
UR - http://www.scopus.com/inward/record.url?scp=84961829031&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=84961829031&partnerID=8YFLogxK
U2 - 10.1109/S3S.2015.7333502
DO - 10.1109/S3S.2015.7333502
M3 - Conference contribution
AN - SCOPUS:84961829031
T3 - 2015 IEEE SOI-3D-Subthreshold Microelectronics Technology Unified Conference, S3S 2015
BT - 2015 IEEE SOI-3D-Subthreshold Microelectronics Technology Unified Conference, S3S 2015
PB - Institute of Electrical and Electronics Engineers Inc.
T2 - IEEE SOI-3D-Subthreshold Microelectronics Technology Unified Conference, S3S 2015
Y2 - 5 October 2015 through 8 October 2015
ER -