TY - GEN
T1 - Charged excitons in fractional quantum Hall regime
AU - Byszewski, M.
AU - Chwalisz-Pietka, B.
AU - Maude, D. K.
AU - Sadowski, M. L.
AU - Potemski, M.
AU - Saku, T.
AU - Hirayama, Y.
AU - Studenikin, S.
AU - Austing, G.
AU - Sachrajda, A. S.
AU - Hawrylak, P.
PY - 2007
Y1 - 2007
N2 - We report on photoluminescence experiments carried out at very low temperatures and with magnetic fields up to 28T. performed on a high mobility two-dimensional electron gas GaAs/AlGaAs quantum well. Our experiments show that clear signatures of the v =1/3, 2/5, 3/7, 3/5, 2/3, 1 sequence of the FQHE states can also be easily visible even in raw magneto-photoluminescence spectra. Theoretical calculations of excitonic transitions suggest that an explanation of the red shift of emission energy at the Hall plateau boundary may be due to the appearance of additional free charged quasi-particles that bind to an exciton, forming a fractionally charged exciton whose emission energy is expected to be lower, in analogy to well known charged excitons in n-type semiconductors. The magnitude of the shift is a measure of the fractionally charged exciton binding energy. Emission in the insulating state of 2DEG at v = 1/3 is attributed to a neutral quasi-exciton whose complicated energy dispersion results in an emission doublet with its low energy line due to the recombination from excited excitonic states.
AB - We report on photoluminescence experiments carried out at very low temperatures and with magnetic fields up to 28T. performed on a high mobility two-dimensional electron gas GaAs/AlGaAs quantum well. Our experiments show that clear signatures of the v =1/3, 2/5, 3/7, 3/5, 2/3, 1 sequence of the FQHE states can also be easily visible even in raw magneto-photoluminescence spectra. Theoretical calculations of excitonic transitions suggest that an explanation of the red shift of emission energy at the Hall plateau boundary may be due to the appearance of additional free charged quasi-particles that bind to an exciton, forming a fractionally charged exciton whose emission energy is expected to be lower, in analogy to well known charged excitons in n-type semiconductors. The magnitude of the shift is a measure of the fractionally charged exciton binding energy. Emission in the insulating state of 2DEG at v = 1/3 is attributed to a neutral quasi-exciton whose complicated energy dispersion results in an emission doublet with its low energy line due to the recombination from excited excitonic states.
KW - Exciton
KW - Fractional quantum Hall effect
KW - Magneto-photoluminescence
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U2 - 10.1063/1.2730061
DO - 10.1063/1.2730061
M3 - Conference contribution
AN - SCOPUS:77958516107
SN - 9780735403970
T3 - AIP Conference Proceedings
SP - 655
EP - 656
BT - Physics of Semiconductors - 28th International Conference on the Physics of Semiconductors, ICPS 2006, Part A and B
T2 - 28th International Conference on the Physics of Semiconductors, ICPS 2006
Y2 - 24 July 2006 through 28 July 2006
ER -