@inproceedings{72c44f12029c461e9dca0834afd670ee,
title = "Computational Screening and Multiscale Simulation of Barrier-Free Contacts for 2D Semiconductor pFETs",
abstract = "Low-resistance p-type contacts to two-dimensional (2D) semiconductors remains a critical challenge towards the industrial application of 2D channel materials in advanced logic technology. To address this challenge, we computationally screen and identify designs for ultralow-resistance p-type contacts to 2D semiconductors such as WSe2 by combining ab initio density-functional-theory (DFT) and quantum device simulations. Two new contact strategies, van der Waals metallic contact (such as 1H-NbS2), and bulk semimetallic contact (such as Co3 Sn2 S2), are identified as realistic pathways to achieving Schottky-barrier-free and low-contact-resistance p-type contacts for 2D semiconductor pFETs. Simulations of these new strategies suggest reduced metal-induced gap states, negligible Schottky barrier height and small contact resistance (down to 20 Ω·μm). Preliminary experimental results in developing Co3 Sn2 S2 as a new semimetal contact material are also demonstrated.",
author = "Ning Yang and Lin, {Yuxuan Cosmi} and Chuu, {Chih Piao} and Saifur Rahman and Tong Wu and Chou, {Ang Sheng} and Liew, {San Lin} and Kohei Fujiwara and Chen, {Hung Yu} and Junya Ikeda and Atsushi Tsukazaki and Hou, {Duen Huei} and Woon, {Wei Yen} and Szuya Liao and Shengxi Huang and Xiaofeng Qian and Jing Guo and Iuliana Radu and {Philip Wong}, {H. S.} and Han Wang",
note = "Publisher Copyright: {\textcopyright} 2022 IEEE.; 2022 International Electron Devices Meeting, IEDM 2022 ; Conference date: 03-12-2022 Through 07-12-2022",
year = "2022",
doi = "10.1109/IEDM45625.2022.10019377",
language = "English",
series = "Technical Digest - International Electron Devices Meeting, IEDM",
publisher = "Institute of Electrical and Electronics Engineers Inc.",
pages = "2811--2814",
booktitle = "2022 International Electron Devices Meeting, IEDM 2022",
}