TY - JOUR
T1 - Correlating the interface structure to spin injection in abrupt Fe/GaAs(001) films
AU - Fleet, L. R.
AU - Yoshida, K.
AU - Kobayashi, H.
AU - Kaneko, Y.
AU - Matsuzaka, S.
AU - Ohno, Y.
AU - Ohno, H.
AU - Honda, S.
AU - Inoue, J.
AU - Hirohata, A.
PY - 2013/1/2
Y1 - 2013/1/2
N2 - Understanding the effect of the interface on electrical spin injection is of great importance for the development of semiconductor spintronics. Fe/GaAs(001) is one of the leading systems for exploring these effects due to the small lattice mismatch. We report on the correlation between the experimentally observed Fe/GaAs(001) interface with the spin-transport properties. Using high-angle annular dark-field scanning transmission electron microscopy, we observe a predominantly abrupt interface with some regions of partial mixing also observed in the same film. We report that reproducible behavior with no bias-dependent polarization inversion was achieved for three-terminal devices. Using ab initio calculations of the experimentally observed interfaces, we show that the contribution to the transport from minority carriers is strongly dependent on the interface structure.
AB - Understanding the effect of the interface on electrical spin injection is of great importance for the development of semiconductor spintronics. Fe/GaAs(001) is one of the leading systems for exploring these effects due to the small lattice mismatch. We report on the correlation between the experimentally observed Fe/GaAs(001) interface with the spin-transport properties. Using high-angle annular dark-field scanning transmission electron microscopy, we observe a predominantly abrupt interface with some regions of partial mixing also observed in the same film. We report that reproducible behavior with no bias-dependent polarization inversion was achieved for three-terminal devices. Using ab initio calculations of the experimentally observed interfaces, we show that the contribution to the transport from minority carriers is strongly dependent on the interface structure.
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U2 - 10.1103/PhysRevB.87.024401
DO - 10.1103/PhysRevB.87.024401
M3 - Article
AN - SCOPUS:84872242071
SN - 0163-1829
VL - 87
JO - Physical Review B - Condensed Matter and Materials Physics
JF - Physical Review B - Condensed Matter and Materials Physics
IS - 2
M1 - 024401
ER -