Correlation between the magnitude of interlayer exchange coupling and charge-to-spin conversion efficiency in a synthetic antiferromagnetic system

Yoshiaki Saito; Shoji Ikeda; Tetsuo Endoh

doi:10.35848/1882-0786/acb311

Correlation between the magnitude of interlayer exchange coupling and charge-to-spin conversion efficiency in a synthetic antiferromagnetic system

Yoshiaki Saito, Shoji Ikeda, Tetsuo Endoh

研究成果: Article › 査読

抄録

The correlation between the magnitude of interlayer exchange coupling (J _ex) and charge-to-spin conversion efficiency (spin Hall angle: θ _SH) is investigated in a synthetic antiferromagnetic (AF) system with compensated magnetization. The magnitude of θ _SH increases linearly with increasing the magnitude of J _ex. We observe the factor of 6.5 increase of spin Hall angle (θ _SH = 45.8%) in a low resistive (ρ _xx = 41 μΩcm) synthetic AF system by increasing the magnitude of J _ex. The low resistive synthetic AF system will be a promising building block for future nonvolatile high-speed memories and logic circuits using the spin Hall effect.

本文言語	English
論文番号	013002
ジャーナル	Applied Physics Express
巻	16
号	1
DOI	https://doi.org/10.35848/1882-0786/acb311
出版ステータス	Published - 2023 1月

ASJC Scopus subject areas

工学（全般）
物理学および天文学（全般）

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10.35848/1882-0786/acb311

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abstract = "The correlation between the magnitude of interlayer exchange coupling (J ex) and charge-to-spin conversion efficiency (spin Hall angle: θ SH) is investigated in a synthetic antiferromagnetic (AF) system with compensated magnetization. The magnitude of θ SH increases linearly with increasing the magnitude of J ex. We observe the factor of 6.5 increase of spin Hall angle (θ SH = 45.8%) in a low resistive (ρ xx = 41 μΩcm) synthetic AF system by increasing the magnitude of J ex. The low resistive synthetic AF system will be a promising building block for future nonvolatile high-speed memories and logic circuits using the spin Hall effect.",

keywords = "interlayer exchange coupling, spin hall angle, spin hall effect, spintronics, synthetic antiferromanet",

author = "Yoshiaki Saito and Shoji Ikeda and Tetsuo Endoh",

note = "Funding Information: This work was supported by the CIES Consortium, MEXT Initiative to Establish Next-generation Novel Integrated Circuits Centers (X-NICS) Grant Number JPJ011438 and JSPS KAKENHI (JP19H00844 and JP21K18189). Publisher Copyright: {\textcopyright} 2023 The Japan Society of Applied Physics.",

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AU - Saito, Yoshiaki

AU - Ikeda, Shoji

AU - Endoh, Tetsuo

N1 - Funding Information: This work was supported by the CIES Consortium, MEXT Initiative to Establish Next-generation Novel Integrated Circuits Centers (X-NICS) Grant Number JPJ011438 and JSPS KAKENHI (JP19H00844 and JP21K18189). Publisher Copyright: © 2023 The Japan Society of Applied Physics.

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N2 - The correlation between the magnitude of interlayer exchange coupling (J ex) and charge-to-spin conversion efficiency (spin Hall angle: θ SH) is investigated in a synthetic antiferromagnetic (AF) system with compensated magnetization. The magnitude of θ SH increases linearly with increasing the magnitude of J ex. We observe the factor of 6.5 increase of spin Hall angle (θ SH = 45.8%) in a low resistive (ρ xx = 41 μΩcm) synthetic AF system by increasing the magnitude of J ex. The low resistive synthetic AF system will be a promising building block for future nonvolatile high-speed memories and logic circuits using the spin Hall effect.

AB - The correlation between the magnitude of interlayer exchange coupling (J ex) and charge-to-spin conversion efficiency (spin Hall angle: θ SH) is investigated in a synthetic antiferromagnetic (AF) system with compensated magnetization. The magnitude of θ SH increases linearly with increasing the magnitude of J ex. We observe the factor of 6.5 increase of spin Hall angle (θ SH = 45.8%) in a low resistive (ρ xx = 41 μΩcm) synthetic AF system by increasing the magnitude of J ex. The low resistive synthetic AF system will be a promising building block for future nonvolatile high-speed memories and logic circuits using the spin Hall effect.

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