Crystal growth of high-purity multicrystalline silicon using a unidirectional solidification furnace for solar cells

B. Gao, X. J. Chen, S. Nakano, K. Kakimoto

研究成果: Article査読

80 被引用数 (Scopus)

抄録

An improved furnace was designed to reduce the carbon impurity of multicrystalline silicon at unidirectional solidification process. Global simulations of oxygen and carbon transport in the improved furnace showed that the carbon concentration in the crystal can be reduced to a negligible value in the order of 1014 atom/cm3; simultaneously, the oxygen concentration in the crystal can also be reduced by at least 30%. Therefore, the present design can markedly reduce the back transfer of CO from graphite components of the furnace.

本文言語English
ページ(範囲)1572-1576
ページ数5
ジャーナルJournal of Crystal Growth
312
9
DOI
出版ステータスPublished - 2010 4月 15
外部発表はい

ASJC Scopus subject areas

  • 凝縮系物理学
  • 無機化学
  • 材料化学

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