Residual stress change in silicon thin films during crystallization of amorphous silicon is discussed experimentally by detecting the wafer curvature change using a scanning laser microscope. The as-deposited amorphous-silicon film shows compressive stress of about 200 MPa. During a crystallization reaction at about 650°C, a large tensile stress of about 1000 MPa develops in the film due to film shrinkage. The final residual stress of polycrystalline film depends on the film formation process.
|ジャーナル||Applied Physics Letters|
|出版ステータス||Published - 1992|
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