Current-induced magnetization switching under magnetic field applied along the hard axis in MgO-based magnetic tunnel junctions

T. Inokuchi, H. Sugiyama, Y. Saito, K. Inomata

研究成果: ジャーナルへの寄稿学術論文査読

12 被引用数 (Scopus)

抄録

The authors have investigated the dependence of the critical current density (Jc) for the current-induced magnetization switching (CIMS) on external magnetic fields applied along the hard axis of a free layer (H hard) and on the duration of pulse current in MgO-based magnetic tunnel junctions. The Jc and the intrinsic current density (J c0), derived from the dependence of the Jc on the pulse duration, decreased as |Hhard| increased. These reductions of Jc and Jc0 would be attributed to the decrease of energy barrier for CIMS and the increase of the spin transfer efficiency.

本文言語英語
論文番号102502
ジャーナルApplied Physics Letters
89
10
DOI
出版ステータス出版済み - 2006

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