We have developed a deep reactive ion etching of Pyrex glass in SF6 plasma. High etch rate (approximately 0.6 μm/min) and smooth surface (Ra to approximately 4 nm) were achieved at low pressure (0.2 Pa) and high self-bias (-390 V). This result indicates energetic ions for physical sputtering and for enhancing chemical reactions are required to etch materials which produce nonvolatile reaction products. Vertical etch profile (base angle approximately 88°), high aspect ratio (>10) and through-out etching of Pyrex glass (200 μm in thickness) were achieved when the mask opening is narrower than 20 μm. Relatively low selectivity to the mask material due to the energetic ion is overcame using thick and vertical electroplated Ni film as a mask. We also find out the base angle of the etch profile depends on the mask profile and the opening width.
|出版ステータス||Published - 2000 1月 1|
|イベント||13th Annual International Conference on Micro Electro Mechanical Systems (MEMS 2000) - Miyazaki, Jpn|
継続期間: 2000 1月 23 → 2000 1月 27
|Other||13th Annual International Conference on Micro Electro Mechanical Systems (MEMS 2000)|
|Period||00/1/23 → 00/1/27|
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