Depth profiling of chemical bonding states of impurity atoms and their correlation with electrical activity in Si shallow junctions

Kazuo Tsutsui, Norifumi Hoshino, Yasumasa Nakagawa, Masaoki Tanaka, Hiroshi Nohira, Kuniyuki Kakushima, Parhat Ahemt, Yuichiro Sasaki, Bunji Mizuno, Takeo Hattori, Hiroshi Iwai

研究成果: Conference contribution