TY - GEN
T1 - Development of high power press-pack IGBT and its applications
AU - Uchida, Yoshiyuki
AU - Seki, Yasukazu
AU - Takahashi, Yoshikazu
AU - Ichijoh, Masami
PY - 2000
Y1 - 2000
N2 - Press-pack IGBT has been developed in recent years as a superior high power IGBT device to conventional IGBT module in reliability and performance. This type of IGBT is replacing GTO or thyristor in such applications as traction, power transmission and industrial motor drive because of its excellent advantages such as high performance, high reliability, compactness due to the both-sided cooling, rupture free feature, and so forth. This paper reviews the performance and structure of 2.5 kV and 4.5 kV press-pack IGBT's and their major applications.
AB - Press-pack IGBT has been developed in recent years as a superior high power IGBT device to conventional IGBT module in reliability and performance. This type of IGBT is replacing GTO or thyristor in such applications as traction, power transmission and industrial motor drive because of its excellent advantages such as high performance, high reliability, compactness due to the both-sided cooling, rupture free feature, and so forth. This paper reviews the performance and structure of 2.5 kV and 4.5 kV press-pack IGBT's and their major applications.
UR - http://www.scopus.com/inward/record.url?scp=33745753325&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=33745753325&partnerID=8YFLogxK
U2 - 10.1109/ICMEL.2000.840538
DO - 10.1109/ICMEL.2000.840538
M3 - Conference contribution
AN - SCOPUS:33745753325
SN - 0780352351
SN - 9780780352353
T3 - 2000 22nd International Conference on Microelectronics, MIEL 2000 - Proceedings
SP - 125
EP - 129
BT - 2000 22nd International Conference on Microelectronics, MIEL 2000 - Proceedings
PB - IEEE Computer Society
T2 - 2000 22nd International Conference on Microelectronics, MIEL 2000
Y2 - 14 May 2000 through 17 May 2000
ER -