Diffusion process of interstitial atoms in an electron irradiated InP studied by transmission electron microscopy

Yutaka Ohno, Nagahito Saitoh, Seiji Takeda, Mitsuji Hirata

研究成果: ジャーナルへの寄稿学術論文査読

1 被引用数 (Scopus)

抄録

Growth of interstitial agglomerates, that are formed in InP by post-annealing above 700 K following 200 keV electron irradiation, has been systematically examined by transmission electron microscopy to understand the migration of point defects in InP. The nucleation and growth of the agglomerates stopped at an early stage of post-annealing. The number density of interstitial atoms in agglomerates, estimated after the growth of all agglomerates stops, did not depend on annealing temperature but on electron dose, and it increased quadratically with electron dose up to 2.5 × 1022 cm-2. These results were well explained by a model in which the agglomerates were formed through the migration of Ini-Pi interstitial-pairs. The migration energy for the pairs was estimated as 1.52 eV.

本文言語英語
ページ(範囲)5628-5632
ページ数5
ジャーナルJapanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers
36
9 A
DOI
出版ステータス出版済み - 1997 9月

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