Direct domain wall thickness measurement using scanning nonlinear dielectric microscopy

Y. Cho, K. Matsuura, N. Valanoor, R. Ramesh

研究成果: Article査読

2 被引用数 (Scopus)

抄録

Using Scanning Nonlinear Dielectric Microscopy (SNDM) which has attained sub-nanometer resolution, we measured the linear dielectric constant of a-domains and c-domains in the (1,0,0) and (0,0,1) oriented PbZr 0.2 Ti 0.8 O 3 thin film and confirmed that the dielectric constant of a-domain is higher than that of c-domain. Next, we observed 90 domain walls (a-c domain walls) and 180 domain walls (c-c domain walls) and we obtained the minimum value of 180 c-c domain wall thickness was 1.87 nm and 90 a-c domain wall was 2.52 nm.

本文言語English
ページ(範囲)171-180
ページ数10
ジャーナルFerroelectrics
292
DOI
出版ステータスPublished - 2003 6月 1

ASJC Scopus subject areas

  • 電子材料、光学材料、および磁性材料
  • 凝縮系物理学

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