Employing the accelerated crucible rotation technique, we grew multicrystalline silicon by the directional solidification process. The distribution of carbon concentration determined by Fourier transform infrared spectroscopy demonstrated that application of accelerated crucible rotation homogenized the carbon concentration in the grown ingot. Attempts were made to explain the effect of crucible rotation on homogenization of carbon concentration in terms of segregation phenomena. Moreover, growth striations induced by the crucible rotation were observed in the axial direction of the ingot.
|ジャーナル||Crystal Growth and Design|
|出版ステータス||Published - 2008 7月|
ASJC Scopus subject areas
- 化学 (全般)