@article{39f2e2dca51f46fd9523a6b45458f9ea,
title = "Dynamic nuclear spin polarization in an all-semiconductor spin injection device with (Ga,Mn)As/n-GaAs spin Esaki diode",
abstract = "We investigate the dynamic nuclear spin polarization in an n-GaAs lateral channel induced by electrical spin injection from a (Ga,Mn)As/n-GaAs spin Esaki diode. Signatures of nuclear spin polarization are studied in both three-terminal and non-local voltage signals, where a strong electron spin depolarization feature is observed close to zero magnetic field. This is due to the large nuclear field induced in the channel through hyperfine interaction between injected electron spins and localized nuclear spins. We study the time evolution of the dynamic nuclear spin polarization and evaluate polarization and relaxation times of nuclear spins in the channel.",
author = "J. Shiogai and M. Ciorga and M. Utz and D. Schuh and T. Arakawa and M. Kohda and K. Kobayashi and T. Ono and W. Wegscheider and D. Weiss and J. Nitta",
note = "Funding Information: This work was partly supported by the German Science Foundation (DFG) via SFB 689, the Japan-Germany Strategic International Cooperative Program (Joint Research Type) from JST and DFG (FOR 1483), Grants-in-Aid from JSPS, MEXT, and the Collaborative Research Program of Institute for Chemical Research, Kyoto University (Grant # 2011-75).",
year = "2012",
month = nov,
day = "19",
doi = "10.1063/1.4767339",
language = "English",
volume = "101",
journal = "Applied Physics Letters",
issn = "0003-6951",
publisher = "American Institute of Physics Publising LLC",
number = "21",
}