Effect of delamination at chip/encapsulant interface on chip stress and transistor characteristics

Hideo Miura, Tetsuo Kumazawa, Asao Nishimura

研究成果: 会議への寄与学会論文査読

18 被引用数 (Scopus)

抄録

The change process of the amplifier gain of bipolar transistors encapsulated in small outline J-leaded packages (SOJ-type packages) during temperature cycling test is discussed. The amplifier gain changes almost linearly with the applied uni-axial stress. The residual stress of the LSI chip is found to change during the temperature cycling test by applying stress-sensing test chips. It is found by applying a finite element analysis and ultrasonic inspection that the stress change is due to delamination at interface between the LSI chip and the encapsulant resin. The predicted amplifier gain change due to this delamination agrees well with the measured result.

本文言語英語
ページ73-78
ページ数6
出版ステータス出版済み - 1995
イベントProceedings of the 1995 ASME International Mechanical Engineering Congress and Exposition - San Francisco, CA, USA
継続期間: 1995 11月 121995 11月 17

会議

会議Proceedings of the 1995 ASME International Mechanical Engineering Congress and Exposition
CitySan Francisco, CA, USA
Period95/11/1295/11/17

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