Effect of Ga-doping on the thermoelectric properties of Ba-Ge type-III clathrate compounds

Jung Hwan Kim, Norihiko L. Okamoto, Katsushi Tanaka, Haruyuki Inui

研究成果: 書籍の章/レポート/Proceedings会議への寄与査読

抄録

Effect of Ga addition on the thermoelectric properties of Ba-Ge type-III clathrate has been investigated as a function of Ga content and temperature. The substitution of Ga atom for Ge atom leads to the decrease of carrier (electron) concentration. Electrical conduction is of n-type for all clathrate compounds investigated and the values of electrical resistivity and Seebeck coefficient increase with the increase in the Ga content and in temperature. Both electronic and lattice thermal conductivity decrease with the increase in the Ga content because of the decreased carrier concentration and the increased extent of the rattling motion of Ba atoms encapsulated in open-dodecahedron, respectively. A very high ZT value of 1.25 is obtained at 670°C for Ba24Ga 15Ge85.

本文言語英語
ホスト出版物のタイトルMaterials Research Society Symposium Proceedings
ページ413-418
ページ数6
出版ステータス出版済み - 2006
イベント2005 Materials Research Society Fall Meeting - Boston, MA, 米国
継続期間: 2005 11月 282005 12月 1

出版物シリーズ

名前Materials Research Society Symposium Proceedings
886
ISSN(印刷版)0272-9172

会議

会議2005 Materials Research Society Fall Meeting
国/地域米国
CityBoston, MA
Period05/11/2805/12/1

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