Effect of heat treatment of Si3N4 on grain growth behavior and grain boundary structure

Naoto Hirosaki, Hideaki Matsubara

研究成果: Article査読

2 被引用数 (Scopus)


Alpha-Si3N4 containing 8 mass% Y2O3 was hot-pressed at 1750°C (SN1) and then heat-treated at 1900°C for 2h (SN2). The microstructure of the sintered materials was observed using a scanning electron microscope (SEM) and a transmission electron microscope (TEM). Both SN1 and SN2 had the microstructure composed of Si3N4 grains and grain boundary phases located at two-grain junctions and multi-grain junctions. Heat treatment promoted grain growth of β-NSi3N4; SN2 had a larger grain size than SN1. The number of multigrain junctions decreased by heat treatment, whereas the size of multi-grain junctions increased. The average width of the two-grain junction film increased by heat treatment, suggesting that the composition of films changed. Crystalline phase was observed at the multi-grain junctions of SN1, whereas those of SN2 were amorphous. The bend strength of SN2 at high-temperatures was lower than that of SN1 because of amorphous phase at multi-grain junctions and the composition change of thin films.

ジャーナルJournal of the Ceramic Society of Japan
出版ステータスPublished - 1997

ASJC Scopus subject areas

  • セラミックおよび複合材料
  • 化学 (全般)
  • 凝縮系物理学
  • 材料化学


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