TY - JOUR
T1 - Effect of pressure on the size of energy gap in semiconducting mixed-valent rare-earth compounds
AU - Yoshii, S.
AU - Kasaya, M.
AU - Takahashi, H.
AU - Mori, N.
PY - 1996/6/2
Y1 - 1996/6/2
N2 - We have synthesized CeRhBi and CeRhAs and found that these compounds crystallize in the ε-TiNiSi-type structure. It is found that CeRhBi is a heavy-fermion compound, whereas CeRhAs is a mixed-valent semiconductor with an energy gap of 144 K, about 10 times larger than that of CeRhSb. Various experimental results throughout the CeRhX series also vary in the sequence CeRh (Bi-Sb-As). However, the gap observed in CeRhAs is suppressed by external-pressure, suggesting that the chemical and the external pressure seem to cause opposite effects on the size of energy gap in these compounds. These results are compared with those for mixed-valent semiconductors Ce3Pt3Bi4 and Ce3Pt3Sb4.
AB - We have synthesized CeRhBi and CeRhAs and found that these compounds crystallize in the ε-TiNiSi-type structure. It is found that CeRhBi is a heavy-fermion compound, whereas CeRhAs is a mixed-valent semiconductor with an energy gap of 144 K, about 10 times larger than that of CeRhSb. Various experimental results throughout the CeRhX series also vary in the sequence CeRh (Bi-Sb-As). However, the gap observed in CeRhAs is suppressed by external-pressure, suggesting that the chemical and the external pressure seem to cause opposite effects on the size of energy gap in these compounds. These results are compared with those for mixed-valent semiconductors Ce3Pt3Bi4 and Ce3Pt3Sb4.
UR - http://www.scopus.com/inward/record.url?scp=0030564178&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=0030564178&partnerID=8YFLogxK
U2 - 10.1016/0921-4526(96)00138-X
DO - 10.1016/0921-4526(96)00138-X
M3 - Article
AN - SCOPUS:0030564178
SN - 0921-4526
VL - 223-224
SP - 421
EP - 425
JO - Physica B: Condensed Matter
JF - Physica B: Condensed Matter
IS - 1-4
ER -