TY - JOUR
T1 - Effects of alloying elements on microstructure, hardness and growth rate of compound layer in gaseous-nitrided ferritic alloys
AU - Meng, Fanhui
AU - Miyamoto, Goro
AU - Furuhara, Tadashi
N1 - Publisher Copyright:
© 2021 The Japan Society for Heat Treatment
PY - 2021
Y1 - 2021
N2 - Pure iron and FeM (M = Mo, Si, Mn, Cr, Al, V) binary ferritic alloys were nitrided at 843 K for various times. Phase constituent, hardness distribution and growth rate of the compound layer are investigated by means of X-ray diffraction, EBSD, EPMA, 3DAP and nanoindentation. In pure iron, ¾ and £ A (beneath ¾) form on the surface, and voids form along the interface. The hardness of £ A is higher than ferrite matrix, while void formation causes softening of compound layer. Although alloying effects on the hardness of compound layer are small, Si, V and Al additions suppress the formation of voids, and therefore the softening is also contained. All the elements investigated increase growth rate of compound layers. Especially the Si, V and Al additions significantly accelerate their growth rate due to the presence of excess nitrogen in compound layer. However, in the case of Al-added specimen, the growth layer becomes sluggish at longer nitriding time, presumably because of the extensive precipitation of AlN into the diffusion layer.
AB - Pure iron and FeM (M = Mo, Si, Mn, Cr, Al, V) binary ferritic alloys were nitrided at 843 K for various times. Phase constituent, hardness distribution and growth rate of the compound layer are investigated by means of X-ray diffraction, EBSD, EPMA, 3DAP and nanoindentation. In pure iron, ¾ and £ A (beneath ¾) form on the surface, and voids form along the interface. The hardness of £ A is higher than ferrite matrix, while void formation causes softening of compound layer. Although alloying effects on the hardness of compound layer are small, Si, V and Al additions suppress the formation of voids, and therefore the softening is also contained. All the elements investigated increase growth rate of compound layers. Especially the Si, V and Al additions significantly accelerate their growth rate due to the presence of excess nitrogen in compound layer. However, in the case of Al-added specimen, the growth layer becomes sluggish at longer nitriding time, presumably because of the extensive precipitation of AlN into the diffusion layer.
KW - Alloying elements
KW - Compound layer
KW - Electron backscatter diffraction (EBSD)
KW - Nitriding
KW - Three-dimensional atom probe (3DAP)
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U2 - 10.2320/matertrans.H-M2021807
DO - 10.2320/matertrans.H-M2021807
M3 - Article
AN - SCOPUS:85105263289
SN - 1345-9678
VL - 62
SP - 596
EP - 602
JO - Materials Transactions
JF - Materials Transactions
IS - 5
ER -