Effects of an ultrathin silicon oxynitride buffer layer on electrical properties of ferroelectric Bi₄Ti₃O₁₂ thin films on p-Si(100) surfaces

Silicon oxynitride (SiON) buffer were used to investigate the electrical properties of ferroelectric Bi₄Ti₃O₁₂ (BiT) films on Si(100). Hysteresis loops with a memory window of 2 V were exhibited by the capacitance-voltage (C-V) characteristics of Au/BiT/SiON/Si(100). Current-voltage characteristics showed the effects of SiON buuffer. Leakage current density of the specimen without the SiON buffer was larger than that of specimen with the buffer, in the reverse bias region.