Effects of GaN thin layer on InGaN at electrolyte-semiconductor interface for the application of photoelectrochemical water splitting

Katsushi Fujii, Kayo Koike, Mika Atsumi, Takashi Itoh, Takenari Goto, Takafumi Yao, Masakazu Sugiyama, Yoshiaki Nakano

研究成果: Conference contribution

抄録

Photoelectrochemical properties of nitride semiconductors are paid attention due to their possibilities of water splitting by visible light absorption. However, the photocurrent density of InxGa 1-xN, which absorbs visible light, is usually lower than that of GaN, which has larger band-gap and absorbing only UV light. The reasons of this are thought to be the band-edge position at the semiconductor-electrolyte interface and the crystal quality. The conduction band-edge decreases with increasing of indium composition and across the hydrogen generation energy at around the indium composition of 0.2. This means that the hydrogen generation ability decreases with increasing of indium composition. Low crystal quality is obtained because the lower growth temperature of InxGa1-xN than that of GaN to achieve the indium incorporation. In order to improve the photocurrent density, band-edge energy control and quantum tunneling effect are tried using the structure of thin GaN layer on InxGa1-xN here. The effect for the photocurrent densities is also discussed.

本文言語English
ホスト出版物のタイトルAdvanced Materials for Solar-Fuel Generation
ページ16-21
ページ数6
DOI
出版ステータスPublished - 2011 12月 1
イベント2011 MRS Fall Meeting - Boston, MA, United States
継続期間: 2011 11月 282012 12月 2

出版物シリーズ

名前Materials Research Society Symposium Proceedings
1387
ISSN(印刷版)0272-9172

Other

Other2011 MRS Fall Meeting
国/地域United States
CityBoston, MA
Period11/11/2812/12/2

ASJC Scopus subject areas

  • 材料科学(全般)
  • 凝縮系物理学
  • 材料力学
  • 機械工学

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