TY - GEN
T1 - Effects of interface roughness on the local valence electronic structure at the SiO2/Si interface
T2 - ICFSI-10 - 10th International Conference on the Formation of Semiconductor Interfaces
AU - Yamashita, Y.
AU - Yamamoto, S.
AU - Mukai, K.
AU - Yoshinobu, J.
AU - Harada, Y.
AU - Tokushima, T.
AU - Takata, Y.
AU - Shin, S.
PY - 2006/3
Y1 - 2006/3
N2 - We investigated effects of interface roughness on the local valence electronic structures at SiCVSi interface in order to clarify the relation between interface structures and interface electronic properties, by using soft X-ray absorption and emission spectroscopy. For atomically smooth interface, the local valence structures depend on intermediate oxidation states at the interface. For atomically rough interface, on the other hand, the local valence structures at the interface show amorphous-like electronic states irrespective of the intermediated oxidation states.
AB - We investigated effects of interface roughness on the local valence electronic structures at SiCVSi interface in order to clarify the relation between interface structures and interface electronic properties, by using soft X-ray absorption and emission spectroscopy. For atomically smooth interface, the local valence structures depend on intermediate oxidation states at the interface. For atomically rough interface, on the other hand, the local valence structures at the interface show amorphous-like electronic states irrespective of the intermediated oxidation states.
UR - http://www.scopus.com/inward/record.url?scp=33744900866&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=33744900866&partnerID=8YFLogxK
U2 - 10.1051/jp4:2006132049
DO - 10.1051/jp4:2006132049
M3 - Conference contribution
AN - SCOPUS:33744900866
SN - 2868839185
SN - 9782868839183
T3 - Journal De Physique. IV : JP
SP - 259
EP - 262
BT - Proceedings - ICFSI-10 - 10th International Conference on the Formation of Semiconductor Interfaces
Y2 - 3 July 2005 through 8 July 2005
ER -