Effects of process-induced mechanical stress on ESD performance

K. Kubota, K. Okuyama, H. Miura, Y. Kawashima, H. Ishizuka, C. Hashimoto

研究成果: ジャーナルへの寄稿会議記事査読

2 被引用数 (Scopus)

抄録

We studied the generation of dislocations during an ESD event by electrothermal and mechanical stress simulations based on analysis of critical mechanical stress for defect formation. We found the local thermal stress by ESD generates dislocations cooperatively with the residual mechanical stress in the Si substrate due to field oxidation. This means that process-induced mechanical stress is another key factor for controlling ESD performance, which will be important especially in low-power applications with severe leak requirements.

本文言語英語
ページ(範囲)87-88
ページ数2
ジャーナルDigest of Technical Papers - Symposium on VLSI Technology
出版ステータス出版済み - 1995
イベントProceedings of the 1995 Symposium on VLSI Technology - Kyoto, Jpn
継続期間: 1995 6月 61995 6月 8

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